6MBI75S-120 Fuji Electric holdings CO.,Ltd, 6MBI75S-120 Datasheet - Page 3

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6MBI75S-120

Manufacturer Part Number
6MBI75S-120
Description
Igbt Module S Series 1200v / 75a 6 In One-package
Manufacturer
Fuji Electric holdings CO.,Ltd
Datasheet

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6MBI75S-120
1000
5000
1000
500
100
500
100
50
50
50
40
30
20
10
0
0
5
5
10
10
Vcc=600V,V
Vcc=600V,Ic=75A,V
Switching time vs. Collector current (typ.)
Switching time vs. Gate resistance (typ.)
Vcc=600V,Ic=75A,V
Switching loss vs. Gate resistance (typ.)
Gate resistance : Rg [
Gate resistance : Rg [
50
Collector current : Ic [ A ]
GE=
±15V, Rg=16 ,Tj=25
GE=
GE=
50
50
±15V ,Tj=125
±15V,Tj=25
100
100
100
]
]
o
C
o
o
C
C
tf
tf
tr
tr
Eon
Eoff
Err
toff
ton
ton
toff
150
500
500
1000
500
100
200
150
100
50
20
15
10
50
5
0
0
0
0
0
toff
ton
tr
tf
200
+V
Vcc=600V,V
Switching loss vs. Collector current (typ.)
Switching time vs. Collector current (typ.)
GE
Vcc=600V,V
=15V,-V
Collector - Emitter voltage : VCE [ V ]
Reverse bias safe operating area
400
50
Collector current : Ic [ A ]
50
Collector current : Ic [ A ]
GE=
GE<
=
GE=
600
±15V, Rg=16 ,Tj=125
15V, Rg>16 ,Tj<125
±15V, Rg=16 ,Tj=125
=
800
100
100
=
IGBT Modules
1000
o
o
C
C
Eon(125
Err(125
Eon(25
Eoff(125
Eoff(25
Err(25
o
C
1200
o
o
o
o
C)
C)
C)
C)
o
o
C)
C)
1400
150
150

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