2MBI150U4H-170 Fuji Electric holdings CO.,Ltd, 2MBI150U4H-170 Datasheet - Page 9

• Manufacturer Part Number: 2MBI150U4H-170
• Description: Igbt Module
• Manufacturer: Fuji Electric holdings CO.,Ltd

1000.0
400
350
300
250
200
150
100
400
350
300
250
200
150
100
100.0
50
50
10.0
0
0
1.0
0.1
Capacitance vs. Collector-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
0
0
0
VGE=0V, f= 1MHz, Tj= 25°C
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
1
1
Collector-Emitter voltage : VCE [V]
VGE=15V / chip
10
Tj= 25°C / chip
VGE=20V 15V
2
2
Tj=25°C
3
3
20
Coes
Cres
Cies
12V
Tj=125°C
4
4
10V
8V
30
5
5
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
10
400
350
300
250
200
150
100
8
6
4
2
0
50
0
Collector current vs. Collector-Emitter voltage (typ.)
0
5
0
MS5F6144
Vcc=900V， Ic=150A，Tj= 25°C
Dynamic Gate charge (typ.)
100
Collector-Emitter voltage : VCE [V]
1
Gate-Emitter voltage : VGE [V]
10
VCE
Tj=25°C / chip
Gate charge : Qg [nC]
Tj= 125°C/ chip
200
2
15
VGE=20V 15V
300
3
20
400
Ic=300A
Ic=150A
Ic=75A
4
H04-004-03a
9
VGE
12V
10V
8V
13
500
25
5
a
b