2MBI200U4D-120 Fuji Electric holdings CO.,Ltd, 2MBI200U4D-120 Datasheet - Page 9

• Manufacturer Part Number: 2MBI200U4D-120
• Description: Igbt Module
• Manufacturer: Fuji Electric holdings CO.,Ltd

100.0
500
400
300
200
100
10.0
500
400
300
200
100
1.0
0.1
0
0
0
0
0
Collector current vs. Collector-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
Capacitance vs. Collector-Emitter voltage (typ.)
Collector-Emitter voltage : VCE [ V ]
Collector-Emitter voltage : VCE [ V ]
VGE=0V, f=1MHz, Tj=25
Collector-Emitter voltage : VCE [ V ]
1
1
VGE=20V
VGE=15V / chip
10
Tj=25
2
2
Tj=25
o
C / chip
15V
o
C
3
3
Tj=125
20
12V
o
o
C
C
4
4
Cies
Coes
Cres
10V
8V
30
5
5
10
500
400
300
200
100
8
6
4
2
0
0
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
0
5
0
0
Collector current vs. Collector-Emitter voltage (typ.)
MS5F6033
200
Collector-Emitter voltage : VCE [ V ]
1
10
Gate-Emitter voltage : VGE [ V ]
Vcc=600V, Ic=200A, Tj=25
Dynamic Gate charge (typ.)
Gate charge : Qg [ nC ]
400
Tj=125
Tj=25
2
VGE=20V
15
o
o
C / chip
C / chip
600
3
VCE
15V
VGE
20
o
800
C
Ic=400A
Ic=200A
Ic=100A
H04-004-03a
4
9
12V
10V
8V
13
1000
25
5