2MBI100U4A-120 Fuji Electric holdings CO.,Ltd, 2MBI100U4A-120 Datasheet - Page 9

• Manufacturer Part Number: 2MBI100U4A-120
• Description: Igbt Module
• Manufacturer: Fuji Electric holdings CO.,Ltd

100.0
250
200
150
100
10.0
250
200
150
100
50
1.0
0.1
50
0
0
0
0
0
Collector current vs. Collector-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
Capacitance vs. Collector-Emitter voltage (typ.)
Collector-Emitter voltage : VCE [ V ]
Collector-Emitter voltage : VCE [ V ]
Collector-Emitter voltage : VCE [ V ]
VGE=0V, f=1MHz, Tj=25
1
1
VGE=20V
VGE=15V / chip
10
Tj=25
2
2
Tj=25
o
C / chip
15V
o
C
3
3
Tj=125
20
12V
o
o
C
C
4
4
Cies
Coes
Cres
10V
8V
30
5
5
10
250
200
150
100
8
6
4
2
0
50
0
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
0
0
5
0
VCE
MS5F6061
Collector current vs. Collector-Emitter voltage (typ.)
Collector-Emitter voltage : VCE [ V ]
1
10
Gate-Emitter voltage : VGE [ V ]
Vcc=600V, Ic=100A, Tj=25
Dynamic Gate charge (typ.)
200
Gate charge : Qg [ nC ]
Tj=125
Tj=25
2
VGE=20V
15
o
o
C / chip
C / chip
3
400
15V
20
o
VGE
C
H04-004-03a
Ic=200A
Ic=100A
Ic=50A
9
4
13
12V
10V
8V
600
25
5