YG802C04R Fuji Electric holdings CO.,Ltd, YG802C04R Datasheet - Page 2

• Manufacturer Part Number: YG802C04R
• Description: Schottky Barrier Diode
• Manufacturer: Fuji Electric holdings CO.,Ltd

(40V / 10A TO-22OF15)
Characteristics
100
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
160
150
140
130
120
110
100
0.1
10
90
80
70
60
50
1
0.0
0
0
Forward Power Dissipation
Forward Characteristic (typ.)
Current Derating (Io-Tc)
Io:Output current of center-tap full wave connection
:Conduction angle of forward current for each rectifier element
Io
Io
2
0.2
Io
360°
Square wave
Square wave
Square wave
1
Io
Sine wave
360°
VF
Average Forward Current
Average Output Current
4
0.4
VR=30V
Forward Voltage (V)
2
6
=120
=180
=180
=60
0.6
DC
o
o
o
o
8
Tj=150
Tj=125
Tj=100
Tj=25
3
0.8
o
10
C
o
o
o
C
C
C
Sine wave
Square wave
Square wave
Square wave
DC
1.0
4
12
Per 1element
(A)
(A)
=180
1.2
14
=120
=60
=180
5
o
o
o
o
16
1.4
1000
10
10
10
100
10
10
10
12
10
-1
-2
-3
8
6
4
2
0
2
1
0
0
0
1
Junction Capacitance Characteristic
Reverse Characteristic (typ.)
Reverse Power Dissipation
VR
5
360°
VR
10
10
VR
VR
15
Reverse Voltage
Reverse Voltage (V)
Reverse Voltage
(typ.)
20
20
25
10
YG802C04R
30
30
35
(V)
(V)
40
40
=180
Tj=100
Tj=150
Tj=125
Tj=25
DC
45
o
o
o
o
C
o
C
C
C
100
50
50