YG831C04R Fuji Electric holdings CO.,Ltd, YG831C04R Datasheet - Page 2

• Manufacturer Part Number: YG831C04R
• Description: Schottky-barrier Diodes
• Manufacturer: Fuji Electric holdings CO.,Ltd

(40V / 6A TO-22OF15)
Characteristics
160
155
150
145
140
135
130
125
120
115
110
105
100
0.01
4.0
3.8
3.6
3.4
3.2
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
95
90
85
80
0.1
10
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2
0.0
0
Io:Output current of center-tap full wave connection
:Conduction angle of forward current for each rectifier element
Io
0.1
1
Forward Characteristic (typ.)
Current Derating (Io-Tc)
360°
Square wave =180
Io
360°
Square wave =120
Forward Power Dissipation
Square wave =60
Io
0.2
Sine wave =180
2
Io
Average Forward Current (A)
VF
Average Output Current
VR=30V
3
0.3
Forward Voltage (V)
DC
4
0.4
o
o
o
o
0.5
5
0.6
Square wave =180
6
Square wave =120
Sine wave =180
Square wave =60
DC
Per 1element
Tj=100
Tj=150
Tj=125
Tj=25
(A)
7
0.7
o
C
o
o
o
C
C
C
8
0.8
o
o
o
o
0.9
9
1000
10
10
10
100
10
10
10
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
-1
-2
-3
2
1
0
0
0
1
Junction Capacitance Characteristic (typ.)
VR
5
10
Reverse Power Dissipation
Reverse Characteristic (typ.)
360°
10
VR
VR
VR
15
Reverse Voltage (V)
Reverse Voltage
Reverse Voltage
20
20
YG831C04R
10
25
30
30
(V)
(V)
35
40
Tj=125
Tj=100
Tj=150
Tj= 25
40
=180
o
o
o
o
DC
C
C
C
C
o
100
50
45