YG811S04R Fuji Electric holdings CO.,Ltd, YG811S04R Datasheet - Page 2

• Manufacturer Part Number: YG811S04R
• Description: Schottky-barrier Diodes
• Manufacturer: Fuji Electric holdings CO.,Ltd

(40V / 5A TO-22OF15)
160
150
140
130
120
110
100
Characteristics
100
90
80
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.1
10
1
0.0
0
0.0
Io:Output current of center-tap full wave connection
:Conduction angle of forward current for each rectifier element
0.5
Io
Forward Characteristic (typ.)
Forward Power Dissipation
1
Current Derating (Io-Tc)
Io Average Forward Current (A)
Io Average Output Current (A)
0.2
1.0
360°
360°
Square wave
Square wave
Square wave
Io
Sine wave
VF Forward Voltage (V)
2
1.5
0.4
VR=30V
2.0
3
0.6
=180°
=120°
=180°
2.5
DC
=60°
4
Tj=150°C
Tj=100°C
Tj=25°C
Tj=125°C
3.0
0.8
5
3.5
Square wave
Square wave
Sine wave
Square wave
DC
1.0
4.0
6
Per 1element
4.5
1.2
=180°
7
5.0
=180°
=120°
=60°
5.5
8
1.4
1000
10
10
10
100
10
10
10
12
10
-1
-2
-3
8
6
4
2
0
2
1
0
0
0
1
Junction Capacitance Characteristic (typ.)
Reverse Characteristic (typ.)
VR
5
Reverse Power Dissipation
VR Reverse Voltage (V)
10
10
360°
VR Reverse Voltage (V)
VR Reverse Voltage (V)
15
20
20
25
10
YG811S04R
30
30
35
40
40
Tj=100°C
Tj=150°C
Tj=125°C
=180°
Tj=25°C
DC
45
100
50
50