YG835C03R Fuji Electric holdings CO.,Ltd, YG835C03R Datasheet - Page 2

• Manufacturer Part Number: YG835C03R
• Description: Schottky Barrier Diode
• Manufacturer: Fuji Electric holdings CO.,Ltd

(30V / 25A TO-22OF15)
Characteristics
160
150
140
130
120
110
100
0.01
100
90
80
70
60
50
40
30
20
0.1
17
16
15
14
13
12
11
10
10
9
8
7
6
5
4
3
2
1
0
1
0.0
0
0
Io:Output current of center-tap full wave connection
:Conduction angle of forward current for each rectifier element
0.1
Square wave =120°
Square wave =180°
1
Square wave =60°
Sine wave =180°
Io
5
2
360°
0.2
Current Derating (Io-Tc)
Forward Characteristic (typ.)
Io
360°
Forward Power Dissipation
Io
Io
3
0.3
10
VF
Average Forward Current (A)
VR=20V
DC
Average Output Current (A)
4
0.4
Forward Voltage (V)
15
5
0.5
6
0.6
20
7
0.7
Sine wave =180°
Square wave =180°
Square wave =60°
Square wave =120°
8
DC
Tj=25°C
Tj=100°C
Tj=150°C
Tj=125°C
25
0.8
Per 1element
9
0.9
10
30
1.0
11
35
1.1
12
10000
1000
10
10
10
10
10
10
10
100
16
15
14
13
12
11
10
10
-1
-2
-3
9
8
7
6
5
4
3
2
1
0
3
2
1
0
0
0
1
Junction Capacitance Characteristic (typ.)
5
VR
10
Reverse Characteristic (typ.)
Reverse Power Dissipation
10
VR
360°
VR
VR
Reverse Voltage (V)
15
Reverse Voltage (V)
Reverse Voltage (V)
20
20
YG835C03R
10
25
30
30
35
40
Tj= 25°C
Tj=125°C
Tj=100°C
Tj=150°C
=180°
40
DC
100
50
45