YG868C15R Fuji Electric holdings CO.,Ltd, YG868C15R Datasheet - Page 2

• Manufacturer Part Number: YG868C15R
• Description: High Voltage Schottky Barrier Diodes
• Manufacturer: Fuji Electric holdings CO.,Ltd

(150V / 30A )
Characteristics
0.01
150
140
130
120
110
100
0.1
10
90
80
70
22
20
18
16
14
12
10
1
8
6
4
2
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
0
0
Square wave
Square wave
Io:Output current of center-tap full wave connection
Sine wave
:Conduction angle of forward current for each rectifier element
Square wave
Current Derating (Io-Tc) (max.)
Forward Power Dissipation (max.)
Forward Characteristic (typ.)
5
2
I o
I o
360°
360°
Io
Io
10
4
V F
Average Output Current
=180°
Average Forward Current
=120°
=180°
DC
=60°
15
VR=75V
6
Forward Voltage
20
8
25
10
30
12
Square wave
Sine wave
Square wave
Square wave
Tj=25°C
DC
Tj=150°C
Tj=125°C
Tj=100°C
(V)
Per 1element
(A)
35
14
(A)
40
16
=180°C
=180°C
=60°C
=120°C
45
18
1000
100
10
10
10
10
10
10
12
10
-1
-2
-3
8
6
4
2
0
1
0
Junction Capacitance Characteristic (max.)
1
0
0 10 20 30 40 50 60 70 80 90 100110120130140150160
Reverse Power Dissipation (max.)
Reverse Characteristic (typ.)
20
V
R
V R
360°
V R
40
VR
YG868C15R (30A)
10
Reverse Voltage
60
Reverse Voltage
Reverse Voltage (V)
80
100
100
120
(V)
Tj=150°C
(V)
140
Tj= 25°C
Tj=100°C
Tj=125°C
DC
=180°
160
1000