YG862C12R Fuji Electric holdings CO.,Ltd, YG862C12R Datasheet - Page 2

• Manufacturer Part Number: YG862C12R
• Description: High Voltage Schottky Barrier Diode
• Manufacturer: Fuji Electric holdings CO.,Ltd

(120V / 10A )
Characteristics
160
150
140
130
120
110
100
0.1
10
90
80
1
8
6
4
2
0
0.0
0
0
Io:Output current of center-tap full wave connection
Square wave =120°
Square wave =180°
Square wave =60°
:Conduction angle of forward current for each rectifier element
Sine wave =180°
Forward Power Dissipation (max.)
0.1
Current Derating (Io-Tc) (max.)
Forward Characteristic (typ.)
I o Average Output Current
360°
I o Average Forward Current (A)
0.2
Io
360°
V F Forward Voltage (V)
Io
0.3
DC
5
2
VR=60V
0.4
0.5
0.6
10
4
0.7
Square wave
Sine wave
Square wave
Square wave
DC
Per 1element
(A)
0.8
Tj=150°C
Tj=125°C
Tj=25°C
Tj=100°C
0.9
=180°
=120°
=180°
=60°
1.0
15
6
1000
10
10
10
10
10
10
100
10
-1
-2
-3
-4
1
0
4
2
0
Junction Capacitance Characteristic (max.)
0
0
1
Reverse Power Dissipation (max.)
10 20 30 40 50 60 70 80 90 100 110 120 130 140
Reverse Characteristic (typ.)
V
20
R
V R
V R Reverse Voltage (V)
360°
VR
40
YG862C12R (10A)
Reverse Voltage
10
Reverse Voltage (V)
60
80
100
(V)
100
DC
120
=180°
Tj=150°C
Tj=100°C
Tj=125°C
Tj= 25°C
1000
140