YG861S15R Fuji Electric holdings CO.,Ltd, YG861S15R Datasheet - Page 2

• Manufacturer Part Number: YG861S15R
• Description: High Voltage Schottky Barrier Diode
• Manufacturer: Fuji Electric holdings CO.,Ltd

(150V / 5A )
Characteristics
160
150
140
130
120
110
100
0.1
10
90
80
70
60
50
40
1
8
6
4
2
0
0.0
0
0
Square wave
IF(AV):Average forward current of center-tap full wave connection
Square wave
Square wave
Sine wave
:Conduction angle of forward current for each rectifier element
Current Derating (IF(AV)-Tc) (max.)
0.1
Forward Power Dissipation (max.)
IF(AV)
Forward Characteristic (typ.)
I o
0.2
V F
360°
360°
Average Forward Current
Io
0.3
=180°
Io
2
=180°
Average Forward Current
DC
=120°
=60°
Forward Voltage
0.4
2
VR=75V
0.5
0.6
4
0.7
4
0.8
(V)
Square wave
Square wave
DC
Square wave
Sine wave
Per 1element
6
0.9
(A)
(A)
Tj=150°C
Tj=125°C
Tj=25°C
Tj=100°C
1.0
=180°
1.1
=180°
=60°
=120°
8
6
1000
10
10
10
10
100
10
10
10
Junction Capacitance Characteristic (max.)
-1
-2
-3
-4
1
0
6
4
2
0
0
1
0 10 20 30 40 50 60 70 80 90 100110120130140150160
Reverse Power Dissipation (max.)
V
Reverse Characteristic (typ.)
20
R
V R
360°
40
V R
VR
YG861S15R (5A)
Reverse Voltage
10
60
Reverse Voltage
Reverse Voltage (V)
80
100
100
(V)
120
Tj=150°C
Tj=125°C
(V)
Tj=100°C
Tj= 25°C
140
DC
=180°
160
1000