YG861S12R Fuji Electric holdings CO.,Ltd, YG861S12R Datasheet - Page 3

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YG861S12R

Manufacturer Part Number
YG861S12R
Description
High Voltage Schottky Barrier Diode
Manufacturer
Fuji Electric holdings CO.,Ltd
Datasheet
(120V / 5A )
1000
100
10
10
10
10
-1
1
0
10
1
-3
Surge Capability (max.)
Transient Thermal Impedance (max.)
Number of Cycles at 50Hz
10
-2
10
10
t
-1
Time
(sec)
10
0
Rth(j-c):5°C/W
100
10
1
1000
100
10
10
1
2
Surge Current Ratings (max.)
tTime (ms) Sinewave
YG861S12R (5A)
10
100
1000

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