YG868C10R Fuji Electric holdings CO.,Ltd, YG868C10R Datasheet - Page 2

• Manufacturer Part Number: YG868C10R
• Description: Low Ir Schottky Barrier Diode
• Manufacturer: Fuji Electric holdings CO.,Ltd

(100V / 30A )
Characteristics
0.01
150
140
130
120
110
100
0.1
10
90
80
70
60
50
40
30
24
22
20
18
16
14
12
10
1
8
6
4
2
0
0.0
0
λ
Io:Output current of center-tap full wave connection
0
Square wave
Current Derating (Io-Tc) (max.)
Forward Characteristic (typ.)
Forward Power Dissipation (max.)
:Conduction angle of forward current for each rectifier element
Square wave
Square wave
Sine wave
1 2 3 4 5 6 7 8 9 0 1 2 3 4 5 6
1 2 3 4 5 6 7 8 9 0 1 2 3 4 5 6
1 2 3 4 5 6 7 8 9 0 1 2 3 4 5 6
1 2 3 4 5 6 7 8 9 0 1 2 3 4 5 6
1 2 3 4 5 6 7 8 9 0 1 2 3 4 5
1 2 3 4 5 6 7 8 9 0 1 2 3 4 5
1 2 3 4 5 6 7 8 9 0 1 2 3 4 5
1 2 3 4 5 6 7 8 9 0 1 2 3 4 5
Io
0.1
5
2
360 º
360 º
0.2
Io Average Output Current (A)
Io
10
λ
Io Average Output Current (A)
4
λ
=180
λ
=120
VF Forward Voltage (V)
λ
=180
DC
=60
0.3
o
15
o
o
6
VR=50V
0.4
20
8
0.5
25
10
0.6
30
12
0.7
DC
Sine wave
Square wave
Square wave
Square wave
Per 1element
35
14
0.8
Tj=150
Tj=125
Tj=100
Tj=25
λ
40
0.9
16
=180
λ
λ
λ
o
=60
C
=180
=120
o
o
o
C
C
C
o
1.0
o
45
18
o
o
1000
10
10
10
10
10
10
100
10
13
12
11
10
-1
-2
-3
2
1
0
9
8
7
6
5
4
3
2
1
0
0
1
0
Reverse Characteristic (typ.)
Junction Capacitance Characteristic (max.)
Reverse Power Dissipation (max.)
VR
10
10
1 2 3 4
1 2 3 4
1 2 3 4
1 2 3 4
1 2 3 4
1 2 3 4
1 2 3 4
20
20
360 º
VR Reverse Voltage (V)
30
30
VR
VR Reverse Voltage (V)
1 2 3 4
1 2 3 4
1 2 3 4
1 2 3 4
1 2 3 4
1 2 3 4
1 2 3 4
YG868C10R (30A)
40
40
10
Reverse Voltage (V)
50
50
60
60
70
70
100
80
80
90 100 110 120
90 100 110 120
Tj=150
Tj=125
Tj=100
Tj= 25
α
o
o
o
o
C
C
C
C
=180
DC
1000
o