YG802C10R Fuji Electric holdings CO.,Ltd, YG802C10R Datasheet - Page 2

• Manufacturer Part Number: YG802C10R
• Description: Schottky Barrier Diode
• Manufacturer: Fuji Electric holdings CO.,Ltd

(100V / 10A TO-22OF15)
Characteristics
160
150
140
130
120
110
100
90
80
70
60
0.1
10
8
7
6
5
4
3
2
1
0
1
0.0
0.0
0
Io
0.5
Io:Output current of center-tap full wave connection
:Conduction angle of forward current for each rectifier element
0.2
2
360°
Io
360°
Io
1.0
Forward Characteristic (typ.)
Square wave =180
Current Derating (Io-Tc)
Square wave =120
Forward Power Dissipation
Io
Square wave =60
0.4
Sine wave =180
Average Forward Current
1.5
4
Average Output Current
VF
VR=50V
0.6
2.0
Forward Voltage
6
DC
0.8
2.5
o
o
o
o
8
3.0
1.0
Tj=150
3.5
Tj=125
Tj=100
Tj=25
10
1.2
Sine wave =180
Square wave =180
Square wave =120
Square wave =60
DC
(V)
4.0
(A)
o
o
(A)
o
o
C
C
C
C
Per 1element
1.4
12
4.5
1.6
5.0
o
14
o
o
o
5.5
1.8
1000
100
10
10
10
10
10
10
18
16
14
12
10
10
8
6
4
2
0
-1
-2
-3
2
1
0
0
0
Junction Capacitance Characteristic (typ.)
10
10
VR
Reverse Power Dissipation
20
20
Reverse Characteristic (typ.)
360°
10
VR
30
VR
30
VR
40
Reverse Voltage
40
Reverse Voltage
Reverse Voltage
50
50
60
YG802C10R
60
70
70
80
100
(V)
(V)
(V)
80
90
90
100
Tj=100
Tj=125
Tj=150
Tj=25
DC
=180
100
110
o
o
o
o
C
o
C
C
C
120
110