YG811S09R Fuji Electric holdings CO.,Ltd, YG811S09R Datasheet - Page 2

• Manufacturer Part Number: YG811S09R
• Description: Schottky Barrier Diode
• Manufacturer: Fuji Electric holdings CO.,Ltd

(90V / 5A TO-22OF15)
Characteristics
0.1
160
150
140
130
120
110
100
10
90
80
70
1
8
7
6
5
4
3
2
1
0
0.0
0.0
0
Current Derating (Io-Tc)
Io:Output current of center-tap full wave connection
Forward Characteristic (typ.)
Forward Power Dissipation
Tj=150
:Conduction angle of forward current for each rectifier element
Tj=125
Tj=100
Io
0.5
0.2
Io
1
o
o
Io
o
C
C
C
1.0
360°
Square wave
Square wave
0.4
Average Output Current
Square wave
Io
Sine wave
VF
360°
Average Forward Current
2
1.5
0.6
VR=50V
Forward Voltage
2.0
3
0.8
=120
=180
=180
=60
DC
2.5
1.0
o
o
o
o
4
Tj=25
3.0
1.2
o
5
C
3.5
Square wave
Square wave
Sine wave
Square wave
DC
1.4
4.0
Per 1element
6
(V)
1.6
(A)
4.5
(A)
=180
=180
7
=60
=120
1.8
5.0
o
o
o
o
2.0
5.5
8
1000
10
10
10
100
10
10
10
20
18
16
14
12
10
10
-1
-2
-3
8
6
4
2
0
2
1
0
0
0
Reverse Characteristic (typ.)
Junction Capacitance Characteristic
Reverse Power Dissipation
10
10
VR
20
VR
VR
20
VR
360°
10
30
30
Reverse Voltage
Reverse Voltage
Reverse Voltage
40
(typ.)
40
50
50
YG811S09R
60
60
70
100
70
80
(V)
(V)
(V)
80
90
Tj=25
Tj=100
Tj=125
Tj=150
=180
100 110
90
o
DC
C
o
o
o
o
C
C
C
100