BLW31 Advanced Semiconductor, Inc., BLW31 Datasheet
BLW31
Manufacturer Part Number
BLW31
Description
Npn Silicon Rf Power Transistor
Manufacturer
Advanced Semiconductor, Inc.
Datasheet
1.BLW31.pdf
(1 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BLW31
Manufacturer:
ASI
Quantity:
20 000
DESCRIPTION:
The
transistor, designed 108-175 MHz
applications. The device utilizes
diffused emitter resistors to achieve
good VSWR capability
FEATURES:
x Common Emitter-Class-C
x P
x Omnigold™ Metalization System
MAXIMUM RATINGS
CHARACTERISTICS
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE x NORTH HOLLYWOOD, CA 91605 x (818) 982-1200 x FAX (818) 765-3004
P
V
V
V
T
SYMBOL
T
T
CBO
DISS
I
CEO
EBO
STG
G
JC
C
BV
BV
BV
J
ASI BLW31
= 10 dB at 30 W/150 MHz
I
C
h
CBO
P
K
OB
FE
CEO
EBO
CES
C
G
NPN SILICON RF POWER TRANSISTOR
40 W @ T
-65 °C to +200 °C
-65 °C to +150 °C
I
I
I
V
V
V
V
C
C
E
CB
CE
CB
CC
= 10 mA
= 200 mA
= 200 mA
is an NPN power
4.4 °C/W
= 30 V
= 5.0 V
= 28 V
= 28 V
4.0 A
4.0 V
36 V
18 V
C
= 25 °C
NONETEST CONDITIONS
T
C
= 25 °C
I
P
C
OUT
= 200 mA
= 25 W
Specifications are subject to change without notice.
f = 175 MHz
f = 1.0 MHz
PACKAGE STYLE .380 4L STUD
MINIMUM TYPICAL MAXIMUM
DIM
A
B
C
D
E
F
G
H
I
J
4.0
8.5
65
35
35
#8-32 UNC-2A
.980 / 24.89
.450 / 11.43
.220 / 5.59
.370 / 9.40
.004 / 0.10
.320 / 8.13
.100 / 2.54
.090 / 2.29
.155 / 3.94
MINIMUM
inches / mm
D
B
.112x45°
ØC
E
60
C
B
E
A
E
F
G
H
.490 / 12.45
.750 / 19.05
MAXIMUM
.230 / 5.84
.385 / 9.78
.007 / 0.18
.330 / 8.38
.130 / 3.30
.100 / 2.54
.175 / 4.45
inches / mm
I
250
2.0
J
---
BLW31
UNITS
mA
REV. A
pF
dB
---
%
V
V
V
1/1
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