TPD4102K TOSHIBA Semiconductor CORPORATION, TPD4102K Datasheet - Page 12

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TPD4102K

Manufacturer Part Number
TPD4102K
Description
Toshiba Intelligent Power Device High Voltage Monolithic Silicon Power Ic
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Description of Bootstrap Capacitor Charging and Its Capacitance
The bootstrap capacitor is charged by turning on the low-side IGBT of the same arm (approximately 1/5 of PWM
cycle) while the high-side IGBT controlled by PWM is off. (For example, to drive at 20 kHz, it takes approximately
10 ms per cycle to charge the capacitor.) When the VS voltage exceeds 3.8 V (55% duty), the low-side IGBT is
continuously in the off state. This is because when the PWM on-duty becomes larger, the arm is short-circuited
while the low-side IGBT is on. Even in this state, because PWM control is being performed on the high-side IGBT,
the regenerative current of the diode flows to the low-side FRD of the same arm, and bootstrap capacitor is charged.
Note that when the on-duty is 100%, diode regenerative current does not flow; thus, the bootstrap capacitor is not
charged.
When driving a motor at 100 % duty cycle, take the voltage drop at 100% duty (see the figure below) into
consideration to determine the capacitance of the bootstrap capacitor.
Capacitance of the bootstrap capacitor = Consumption current (max) of the high-side driver × Maximum drive time
/(V
Attention should also be given to the effects of aging and temperature change on the capacitor.
Safe Operating Area
The IC uses bootstrapping for the power supply for high-side drivers.
CC
Note 1: The above safe operating areas are T
Note 2: The above safe operating areas include the over current protection operation area.
Duty cycle 100% (V
V
V
Duty cyle 55% (V
F (BSD)
F (FRD)
− V
Duty cycle 0% (V
V
F (BSD)
PWM reference voltage
1.0
S
0
Range
A
B
C
exceeds these, the safe operation areas are reduced in size.
VVsOFF (V
0
: Bootstrap diode forward voltage
: Flywheel diode forward voltage
Duty cycle 80%
+ V
Power supply voltage V
Figure 1 SOA at T
F (FRD)
S
S
S
S
: 5.4 V)
: 3.8 V)
: 2.1 V)
: 1.3 V)
Both high- and low-side OFF.
Charging range. Low-side IGBT turns on at the phase when the high-side IGBT turns on in the timing
chart.
No charging range. High-side at PWM; low-side continues according to the timing chart.
GND
Triangular wave
− 13.5) [F]
j
= 135°C
BB
(V)
Low-side ON
j
400
= 135°C (Figure 1) and Tc = 95°C (Figure 2). If the temperature
12
High-side duty ON
IGBT Operation
1.1
0
0
Power supply voltage V
Figure 2 SOA at Tc = 95°C
C
B
A
BB
(V)
TPD4102K
2004-07-07
400

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