UNR6111 Panasonic Corporation of North America, UNR6111 Datasheet - Page 2

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UNR6111

Manufacturer Part Number
UNR6111
Description
Silicon Pnp Epitaxial Planer Transistor
Manufacturer
Panasonic Corporation of North America
Datasheet
Transistors with built-in Resistor
I
* h
2
Emitter
cutoff
current
Forward
current
transfer
ratio
Input
resis-
tance
Resis-
tance
ratio
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Collector to emitter saturation voltage
Output voltage high level
Output voltage low level
Transition frequency
FE
Rank
Electrical Characteristics
h
FE
rank classification (UNR6115/6116/6117/6110)
UNR6111
UNR6112/6114/611E/611D
UNR6113
UNR6115/6116/6117/6110
UNR611F/611H
UNR6119
UNR6118/611L
UNR6111
UNR6112/611E
UNR6113/6114
UNR6115*/6116*/6117*/6110*
UNR611F/611D/6119/611H
UNR6118/611L
UNR6111/6114/6115
UNR6112/6117
UNR6113/6110/611D/611E
UNR6116/611F/611L
UNR6118
UNR6119
UNR611H
UNR6111/6112/6113/611L
UNR6114
UNR6118/6119
UNR611D
UNR611E
UNR611F
UNR611H
Parameter
160 to 260
Q
UNR6113
UNR611D
UNR611E
210 to 340
R
(Ta=25˚C)
Symbol
I
I
I
V
V
h
V
V
V
f
R
R
CBO
CEO
EBO
T
FE
1
1
CBO
CEO
CE(sat)
OH
OL
/R
2
290 to 460
V
V
V
I
I
V
I
V
V
V
V
V
V
C
C
C
CB
CE
EB
CE
CC
CC
CC
CC
CC
CB
S
6118/6119/6110/611D/611E/611F/611H/611L
= –10µA, I
= –2mA, I
= –10mA, I
UNR6111/6112/6113/6114/6115/6116/6117/
= –50V, I
= –6V, I
= –10V, I
= –50V, I
= –5V, V
= –5V, V
= –5V, V
= –5V, V
= –5V, V
= –10V, I
Conditions
C
B
E
B
B
B
B
B
E
B
C
E
B
= 0
= 0
= 0
= – 0.5V, R
= –2.5V, R
= –3.5V, R
= –10V, R
= –6V, R
= 0
= 0
= –5mA
= 1mA, f = 200MHz
= – 0.3mA
L
L
= 1kΩ
L
L
L
= 1kΩ
= 1kΩ
= 1kΩ
= 1kΩ
(–30%)
–4.9
0.17
0.08
0.37
min
0.17
–50
–50
160
0.8
3.7
1.7
35
60
80
30
20
0.51
0.21
2.14
0.47
0.22
typ
4.7
2.2
1.0
0.1
4.7
80
10
22
47
1
(+30%)
– 0.01
– 0.25
– 0.1
– 0.5
– 0.5
– 0.2
– 0.1
– 0.2
– 0.2
– 0.2
– 0.2
max
–1.0
–1.5
–2.0
0.25
0.12
0.57
0.27
460
1.2
5.7
2.6
MHz
Unit
mA
kΩ
µA
µA
V
V
V
V
V

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