TN5335 Supertex, Inc., TN5335 Datasheet

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TN5335

Manufacturer Part Number
TN5335
Description
N-channel Enhancement-mode Vertical Dmos Fet
Manufacturer
Supertex, Inc.
Datasheet

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Part Number:
TN5335N8-G
0
Features
Applications
-G indicates package is RoHS compliant (‘Green’)
Absolute Maximum Ratings
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
* Distance of 1.6mm from case for 10 seconds.
Ordering Information
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature*
TN5331
Device
Low threshold
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Complementary N- and P-channel devices
Logic level interfaces - ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
TO-236AB (SOT-23)
TN5335K1-G
Package Options
N-Channel Enhancement-Mode
Vertical DMOS FET
-55
TO-243AA (SOT-89)
O
TN5335N8-G
C to +150
300
Value
BV
BV
±20V
DGS
DSS
O
O
C
C
Pin Confi gurations
Product Marking
General Description
This low threshold, enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven, silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and the high input
impedance and positive temperature coeffi cient inherent
in MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
TO-236AB (SOT-23) (K1)
BV
DRAIN
DSS
350
(V)
/BV
TN3SW
DGS
GATE
N3SW
TO-236AB (SOT-23) (K1)
TO-243AA (SOT-89) (N8)
SOURCE
R
W = Code for week sealed
(max)
DS(ON)
(Ω)
15
W = Code for week sealed
= “Green” Packaging
= “Green” Packaging
TO-243AA (SOT-89) (N8)
DRAIN
I
(min)
(mA)
750
D(ON)
GATE
DRAIN
TN5335
SOURCE
V
(max)
2.0
GS(th)
(V)

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TN5335 Summary of contents

Page 1

... C O 300 DS(ON) D(ON) DGS (max) (min) (Ω) (mA) 15 750 DRAIN DRAIN SOURCE GATE GATE TO-243AA (SOT-89) (N8 Code for week sealed N3SW = “Green” Packaging TO-236AB (SOT-23) (K1 Code for week sealed TN3SW = “Green” Packaging TO-243AA (SOT-89) (N8) TN5335 V GS(th) (max) (V) 2.0 SOURCE ...

Page 2

... 1 4.5V 150mA mmho V = 25V 200mA DS D 110 25V 1.0MHz 25V 150mA 25Ω GEN 200mA 0V 200mA GS SD TN5335 † DRM (mA) (A) 110 0.8 230 1.3 ...

Page 3

... Switching Waveforms and Test Circuit 10V INPUT 10 (ON d(ON 10% OUTPUT 0V 90% 90% PULSE GENERATOR t (OFF d(OFF) F 10% INPUT 90% 3 TN5335 OUTPUT GEN D.U.T. ...

Page 4

... TO-236AB (SOT-23) Package Outline (K1) 2.90x1.30mm body, 1.12mm height (max), 1.90mm pitch Symbol A A1 MIN 0.89 0.01 Dimension NOM - (mm) MAX 1.12 0.10 JEDEC Registration TO-236, Variation AB, Issue H, Jan. 1999. Drawings not to scale 0.88 0.30 2.80 2.10 - 0.95 - 2.90 - 1.02 0.50 3.04 2. 1.20 0.40 0.95 1.90 0.54 1.30 0.50 BSC BSC REF 1.40 0.60 TN5335 θ ...

Page 5

... MAX 1.60 0.56 JEDEC Registration TO-243, Variation AA, Issue C, July 1986. Drawings not to scale. (The package drawing(s) in this data sheet may not refl ect the most current specifi cations. For the latest package outline information go to http://www.supertex.com/packaging.html.) Doc.# DSFP-TN5335 A020508 ...

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