BUD742 ETC-unknow, BUD742 Datasheet - Page 2

• Manufacturer Part Number: BUD742
• Description: Silicon Npn High Voltage Switching Transistor
• Manufacturer: ETC-unknow

Maximum Thermal Resistance
T
Electrical Characteristics
T
BUD742
Vishay Telefunken
Junction case
Collector cut-off current
Collector-emitter
breakdown voltage (figure 1)
Emitter-base
breakdown voltage
Collector-emitter
saturation voltage
Base-emitter saturation voltage I
DC forward current
transfer ratio
Collector-emitter
working voltage
Dynamic saturation voltage
Gain bandwidth product
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2 (9)
case
case
y
= 25 C, unless otherwise specified
= 25 C, unless otherwise specified
Parameter
Parameter
g
g
V
V
I
I
I
I
I
I
V
V
V
V
V
I
–V
I
I
I
f = 1 MHz
C
measure
E
C
C
C
C
B1
C
C
C
CE
CE
CE
CE
CE
CE
S
= 1 mA
= 500 mA; L = 125 mH;
= 0.8 A; I
= 2.5 A; I
= 0.8 A; I
= 2.5 A; I
= 2.5 A; I
= 2.5 A; I
= 200 mA; V
BE(off)
= 50 V; L = 1 mH; I
= 0.5 A; –I
= 900 V
= 900 V; T
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 100 mA
= 5 V
Test Conditions
Test Conditions
B
B
B
B
B
B
C
C
C
C
= 0.2 A
= 0.8 A
= 0.2 A
= 0.8 A
= 0.5 A; t = 1
= 0.5 A; t = 3
= 10 mA
= 0.8 A
= 2.5 A
= 5 A
B2
case
CE
= 0.5 A;
= 10 V;
= 150 ° C
C
= 2.5 A;
m
m
s
s
V
V
V
V
Symbol
V
V
V
V
CEsatdyn
CEsatdyn
(BR)CEO
(BR)EBO
V
Symbol
I
I
h
h
h
h
CEsat
CEsat
BEsat
BEsat
CES
CES
CEW
R
f
FE
FE
FE
FE
T
thJC
Min
400
500
11
15
15
7
4
4
Document Number 86532
Value
3.12
Typ
1.5
7
Rev. 1, 20–Jan–99
Max
200
0.2
0.4
1.2
10
12
1
3
K/W
Unit
MHz
Unit
m
m
V
V
V
V
V
V
V
V
V
A
A