MJ410 Inchange Semiconductor Company, MJ410 Datasheet - Page 2
![no-image](/images/no-image-200.jpg)
MJ410
Manufacturer Part Number
MJ410
Description
Isc Silicon Npn Power Transistor
Manufacturer
Inchange Semiconductor Company
Datasheet
1.MJ410.pdf
(2 pages)
INCHANGE Semiconductor
isc
ELECTRICAL CHARACTERISTICS
T
isc Website:www.iscsemi.cn
C
SYMBOL
V
=25℃ unless otherwise specified
V
V
CEO(SUS)
h
h
CE
BE
I
I
I
CEO
CBO
EBO
FE-1
FE-2
f
T
Silicon NPN Power Transistor
(sat)
(sat)
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff current
DC Current Gain
DC Current Gain
Current-Gain—Bandwidth Product
PARAMETER
I
I
I
V
V
V
I
I
I
C
C
C
C
C
C
CE
CB
EB
= 100mA; I
= 1A; I
= 1A; I
= 1A; V
= 2.5A; V
= 0.2A; V
= 5V; I
= 200V; I
= 200V;V
B
B
CE
= 0.1A
B
= 0.1A
B
CONDITIONS
C
= 0
CE
CE
=5V
B
B
EB(off)
=5V
=10V; f=1.0MHz
= 0
= 0
=1.5V;T
C
=125℃
isc
Product Specification
MIN
200
2.5
30
10
TYP
MJ410
MAX
0.25
0.8
1.2
0.5
5.0
90
UNIT
MHz
mA
mA
mA
V
V
V