NSL35TT1 ON Semiconductor, NSL35TT1 Datasheet - Page 2

• Manufacturer Part Number: NSL35TT1
• Description: High Current Surface Mount Pnp Transistor Silicon Low Vce Sat Transistor For Battery Operated Applications
• Manufacturer: ON Semiconductor

3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
Collector −Emitter Breakdown Voltage
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Collector Cutoff Current
Collector−Emitter Cutoff Current
Emitter Cutoff Current
DC Current Gain (Note 3)
Collector −Emitter Saturation Voltage (Note 3)
Base −Emitter Saturation Voltage (Note 3)
Base −Emitter Turn−on Voltage (Note 3)
Input Capacitance
Output Capacitance
Turn−On Time
Turn−Off Time
(I
(I
(I
(V
(V
(V
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(V
(V
(I
(I
C
C
E
C
C
C
C
C
C
C
C
C
C
BI
B1
CB
CES
EB
EB
CB
= −0.1 mAdc, I
= −10 mAdc, I
= −0.1 mAdc, I
= −100 mA, V
= −100 mA, V
= −250 mA, V
= −50 mA, I
= −100 mA, I
= −250 mA, I
= −250 mA, I
= −500 mA, I
= −150 mA, I
= −150 mA, V
= −50 mA, I
= I
= −4.0 Vdc)
= 0 V, f = 1.0 MHz)
= −35 Vdc, I
= 0 V, f = 1.0 MHz)
B2
= −30 Vdc)
= −50 mA, I
B
C
B
B
B
B
B
= −0.5 mA)
CE
CE
CE
CE
B
= −500 mA, R
E
C
E
= −1.0 mA)
= −2.5 mA)
= −5.0 mA)
= −50 mA)
= −20 mA)
= 0)
= 0)
= 0)
= 0)
= −1.0 V)
= −2.0 V)
= −2.0 V)
= −3.0 V)
C
= −500 mA, R
Characteristic
L
= 3.0 Ω)
L
(T
= 3.0 Ω)
A
= 25°C unless otherwise noted)
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2
V
V
V
Symbol
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
I
CE(sat)
BE(sat)
C
I
I
BE(on)
C
h
CBO
EBO
CES
t
t
obo
on
off
FE
ibo
−5.0
Min
−35
−50
100
100
100
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typical
−0.090
−0.200
−0.320
−0.170
−0.270
−0.03
−0.03
−0.01
−0.81
−0.81
−7.0
−45
−65
180
180
150
45
18
40
70
−0.130
−0.350
−0.450
−0.350
−0.875
Max
−0.1
−0.1
−0.1
−0.9
−
−
−
−
−
−
−
−
−
−
−
mAdc
mAdc
mAdc
Unit
Vdc
Vdc
Vdc
pF
pF
ns
ns
V
V
V