BU99901GUZ-W ROHM Co. Ltd., BU99901GUZ-W Datasheet - Page 2

• Manufacturer Part Number: BU99901GUZ-W
• Description: 4k?8 Bit Electrically Erasable Prom
• Manufacturer: ROHM Co. Ltd.

◇RECOMMENDED OPERATING CONDITION
◇DC OPERATING CHARACTERISTICS (Unless otherwise specified Ta=-40～85℃､V
◇MEMORY CELL CHARACTERISTICS(Ta=25℃、Vcc=1.7～3.6V）
Output Leakage Current
Input Leakage Current
○ This product is not designed for protection against radioactive rays.
Supply Voltage
“L” Output Voltage1
“L” Output Voltage2
“H” Input Voltage1
“H” Input Voltage2
“H” Input Voltage3
“L” Input Voltage1
“L” Input Voltage2
“L” Input Voltage3
Operating Current
Standby Current
Pull-up resistor
Write/Erase Cycle
Data Retention
Parameter
Parameter
Input Voltage
Parameter
Write(Ta=-40～85℃)
Read(Ta=-40～85℃)
Symb
V
V
V
V
V
V
V
V
I
I
I
I
CC1
CC2
I
I
LI2
ol
OL1
OL2
LO
SB
IH1
IH2
IH3
IL1
IL2
IL3
LI
*1
*1
0.7V
0.8V
0.9Vcc
Min.
-0.3
-0.3
-0.3
－
－
-1
-1
－
－
－
6
CC
CC
100,000
Specification
Min.
40
Typ.
－
－
－
－
－
－
－
－
－
10
－
－
－
－
Specification
Vcc+1.0 V 2.5V≦Vcc≦3.6V
Vcc+1.0 V 1.8V≦Vcc＜2.5V
Vcc+1.0 V 1.7V≦Vcc＜1.8V
0.3V
0.2V
0.1Vcc
REV. A
Max.
4.１
0.4
0.2
1.7
2.0
14
Symbol
1
1
Typ.
－
－
Vcc
CC
CC
V
IN
Unit
μA V
μA V
μA
kΩ (SCL, SDA)
mA
mA
V 2.5V≦Vcc≦3.6V
V 1.8V≦Vcc＜2.5V
V 1.7V≦Vcc＜1.8V
V I
V I
*1:Not 100％ TESTED
V
Byte Write
Page Write
V
Random Read
Current Read
Sequential Read
V
WP=GND
OL
OL
IN
OUT
CC
CC
CC
Max.
=3.0mA，2.5V≦Vcc≦3.6V（SDA）
=0.7mA，1.7V≦Vcc＜2.5V（SDA）
=0V～V
－
－
=3.3V,f
=3.6V,f
=3.6V,SDA,SCL=V
=0V～V
2.7～3.3
1.7～3.6
0～Vcc
Rating
SCL
SCL
CC
CC
, (WP, TEST)
cycle
=400ｋHz，
=400ｋHz
year
Unit
test condition
（SDA）
CC
=1.7～3.6V)
CC
t
WR
Unit
V
V
=5ms
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