BU9829GUL-W ROHM Co. Ltd., BU9829GUL-W Datasheet - Page 2

• Manufacturer Part Number: BU9829GUL-W
• Description: Cmos 16kbit Serial Eeprom Built-in Ldo Regulator
• Manufacturer: ROHM Co. Ltd.

◇ MEMORY CELL CHARACTERISTICS(Ta=25℃, Vcc1=1.6～3.6V)
Write/Erase Cycle
Data Retention
◇ EEPROM DC OPERATING CHARACTERISTICS
(Unless otherwise specified Ta=-30～85℃, Vcc1=1.6～3.6V)
"H" Input Voltage1
"H" Input Voltage2
"L" Input Voltage1
"L" Input Voltage2
"L" Output Voltage1
"L" Output Voltage2
"H" Output Voltage1
"H" Output Voltage2
Input Leakage Current
Output Leakage Current
Operating current
Write
Operating Current
Read
Standby Current
◇ LDO REGULATOR DC OPERATING CHARACTERISTICS
(Unless otherwise specified Ta=-30～85℃, Vcc2=2.9～3.6V)
Output Voltage1-1
Output Voltage1-2
Output Voltage2-1
Output Voltage2-2
Output Voltage3-1
Output Voltage3-2
Output Voltage4-1
Output Voltage4-2
Operating Current
Standby Current
"H"Input Voltage
"L"Input Voltage
○This product is not designed for protection against radioactive rays.
◇ PIN No. / PIN NAME
PIN No.
Parameter
Parameter
A1
A2
A3
B1
B2
B3
C1
C2
C3
Parameter
Symbol
Symbol
V
V
V
V
V
V
V
V
PIN NAME
VOH1
VOH2
VOL1
VOL2
VIH1
VIH2
ICC1
ICC2
ICC3
ICC4
OUT
OUT
OUT
OUT
OUT
OUT
OUT
OUT
VIL1
VIL2
ILO
ISB
ISB
VIH
VIL
Icc
ILI
LDOEN
VOUT
1-1
1-2
2-1
2-2
3-1
3-2
4-1
4-2
Vcc1
Vcc2
GND
CSB
SCK
SO
SI
0.7xVcc1
0.75xVcc1
Vcc1-0.2
Vcc1-0.2
-0.3Vcc2
-0.3
-0.3
Min.
Min.
2.9
2.9
2.8
2.8
2.7
2.7
2.6
2.6
1.4
*1
*1
-1
-1
－
－
0
0
-
-
-
-
-
Specification
Specification
Typ.
Typ.
3.0
3.0
2.9
2.9
2.8
2.8
2.7
2.7
－
－
－
－
－
－
－
－
－
－
－
－
－
－
-
-
-
-
-
Vcc1+0.3
Vcc1+0.3
0.3xVcc1
0.25xVcc1
Vcc2+0.3
Vcc1
Vcc1
100,000
Max.
Max.
200
2.0
1.0
3.2
3.1
3.1
3.0
3.0
2.9
2.9
2.8
1.0
0.6
0.2
0.2
1.5
0.2
0.6
Min.
1
1
10
Unit
Unit
μA
μA
μA
μA
μA
mA
mA
mA
mA
V
V
V
V
V
V IOL=1.0mA, 1.6V≦Vcc1<2.5V
V
V IOH=-100μA, 1.6V≦Vcc1<2.5V
V
V
V
V
V
V
V
V
V
V 2.9V≦Vcc2≦3.6V
2.5V≦Vcc1≦3.6V
1.6V≦Vcc1<2.5V
2.5V≦Vcc1≦3.6V
1.6V≦Vcc1<2.5V
IOL=1.0mA, 2.5V≦Vcc1≦3.6V
IOH=-0.4mA, 2.5V≦Vcc1≦3.6V
VIN=0V～Vcc1
VOUT=0V～Vcc1 , CSB=Vcc1
Vcc1=1.8V, fSCK=2MHz, tE/W=5ms
Byte Write，Page Write, Write Status Register
Vcc1=2.5V , fSCK=5MHz , tE/W=5ms
Byte Write，Page Write, Write Status Register
Vcc1=1.8V , fSCK=2MHz, SO=OPEN
Read，Read Status Register
Vcc1=2.5V , fSCK=5MHz, SO=OPEN
Read，Read Status Register
Vcc1=3.6V, CSB=SCK=SI=Vcc1/GND,SO=OPEN
3.2V≦Vcc2≦3.6V, IOUT=0,2mA, VSET=1,0=[1:1]
3.2V≦Vcc2≦3.6V, IOUT=2,10mA, VSET=1,0=[1:1]
3.1V≦Vcc2≦3.6V, IOUT=0,2mA, VSET=1,0=[1:0]
3.1V≦Vcc2≦3.6V, IOUT=2,10mA, VSET=1,0=[1:0]
3.0V≦Vcc2≦3.6V, IOUT=0,2mA, VSET=1,0=[0:1]
3.0V≦Vcc2≦3.6V, IOUT=2,10mA, VSET=1,0=[0:1]
2.9V≦Vcc2≦3.6V, IOUT=0,2mA, VSET=1,0=[0:0]
2.9V≦Vcc2≦3.6V, IOUT=2,10mA, VSET=1,0=[0:0]
Vcc2=3.6V, IOUT=0A
Vcc2=3.6V, IOUT=0A, LDOEN=GND
2.9V≦Vcc2≦3.6V
Specification
Typ.
-
-
Test condition
test condition
Max.
-
-
Cycle
Year
Unit
REV. A
CSB
SCK
SCK clock Frequency
SCK High Time
SCK Low Time
CSB High Time
CSB Setup Time
CSB Hold Time
SCK Setup Time
SCK Hold Time
SI Setup Time
SI Hold Time
Output Data Delay Time
Output Hold Time
Output Disable Time
SCK Rise Time
SCK Fall Time
Output Rise Time
Output Fall Time
Write Cycle Time
Wait Time From Vcc1 on To
EEPROM Command
Vcc1 Rise Time
LDOEN Wait Time
VOUT
◇ EEPROM AC OPERATING CHARACTERISTICS
(Ta=-30～85℃)
◇
◇ BLOCK DIAGRAM
SI
SO
LDO REGULATOR AC OPERATING CHARACTERISTICS
(Ta=-30～85℃)
Parameter
Parameter
INSTRUCTION
DECODE
CONTROL CLOCK
INSTRUCTION
REGISTER
*1
*1
*1
*1
*1
RESISTOR
AMP
Fig.1 BLOCK DIAGRAM
ADDRESS
REGISTER
tSCKWH
tSCKWL
tLDOEN
Symbol
Symbol
tSCKS
tSCKH
DATA
REGIST
tVcc1
fSCK
tCSS
tCSH
tE/W
tDIS
tDIH
tCS
tPD
tOH
tOZ
tRC
tFC
tRO
tFO
tON
+
-
WRITE
INHIBITION
VOLTAGE
DETECTION
Min.
Min.
200
200
200
150
150
11bit
－
50
50
50
50
－
－
－
－
－
－
15
15
-
0
-
8bit
B.R
1.6V≦Vcc1<1.8V
2.9V≦Vcc≦3.6V
ADDRESS
DECODER
Typ.
Typ.
－
－
－
－
－
－
－
－
－
－
－
－
－
－
－
－
－
－
－
－
－
R/W
AMP
HIGH VOLTAGE
GENERATOR
VOUT SETTING REGISTER
LDOEN
Max.
Max.
100
200
2.5
－
－
－
－
－
－
－
－
－
50
50
－
-
1
1
5
5
-
11bit
*1 Not 100% TESTED
8bit
msec
msec
Unit
Min.
－
80
80
90
60
60
50
50
20
20
－
15
1.8V≦Vcc1≦3.6V
-
0
-
-
-
-
-
16,384 bit
EEPROM
Vcc1x0%→Vcc1x95%point
Vcc1x0%point→LDOEN=High
2bit
Typ.
Test condition
－
－
－
－
－
－
－
－
－
－
－
－
－
－
－
－
－
－
－
Max.
－
－
－
－
－
－
－
－
－
80
80
50
50
－
5
-
1
1
5
Unit
MHz
μs
μs
ms
ms
2/4
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns