BD539 Bourns, Inc., BD539 Datasheet
BD539
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BD539 Summary of contents
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... Derate linearly to 150°C free air temperature at the rate of 16 mW/° JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS Pin electrical contact with the mounting base. ...
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... BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature PARAMETER Collector-emitter (BR)CEO C breakdown voltage (see Note Collector-emitter CES CE cut-off current V = 100 120 Collector cut-off ...
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... JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS COLLECTOR-EMITTER SATURATION VOLTAGE TCS631AH 25° 80° ...
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... BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS 10 1·0 0·1 0·01 4 MAXIMUM FORWARD-BIAS SAFE OPERATING AREA BD539 BD539A BD539B BD539C BD539D 1·0 10 100 V - Collector-Emitter Voltage - V CE Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE 50 40 ...