DVR1V8W Diodes, Inc., DVR1V8W Datasheet - Page 2
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DVR1V8W
Manufacturer Part Number
DVR1V8W
Description
Complex Array For Voltage Regulators
Manufacturer
Diodes, Inc.
Datasheet
1.DVR1V8W.pdf
(5 pages)
Electrical Characteristics, NPN Transistor
Electrical Characteristics, Zener Element
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Notes:
.
DS30578 Rev. 5 - 2
DVR1V8W
DVR2V5W
DVR3V3W
DVR5V0W
Number
Type
4. Short duration test pulse used to minimize self-heating effect.
5. Nominal Zener voltage is measured with the device junction in thermal equilibrium at T
Nom (V)
Characteristic
3.3
3.9
4.7
5.1
Zener Voltage Range (Note 5)
V
Min (V)
Z
4.85
3.1
3.7
4.4
@ I
ZT
www.diodes.com
V
V
V
Symbol
V
Max (V)
@T
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
I
C
I
5.36
h
CBO
EBO
3.5
4.1
5.0
@T
f
2 of 5
obo
FE
T
A
= 25°C unless otherwise specified
A
= 25°C unless otherwise specified
Min
150
100
45
18
⎯
⎯
⎯
⎯
5
Max
T
800
0.5
⎯
⎯
⎯
⎯
= 30°C ±1°C.
1
1
8
0.05
mA
I
ZT
5
5
5
MHz
Unit
μA
μA
pF
⎯
V
V
V
V
I
I
I
V
V
I
I
V
V
C
C
E
C
C
CB
EB
CB
CB
= 100μA, I
= 300mA, I
= 100μA, I
= 1mA, I
= 100mA, V
= 4V, I
= 40V, I
= 10V, f = 1.0MHz, I
= 10V, I
μA
5
3
3
5
Maximum Reverse
Leakage Current
B
C
Test Condition
E
E
= 0
= 0
E
C
B
= 0
= 50mA, f = 100MHz
= 0
= 0
CE
I
= 30mA
R
DVR1V8W - DVR5V0W
@ V
= 1V
R
© Diodes Incorporated
E
= 0
V
1
1
2
3