Mechanical Data
Features
Maximum Ratings
Thermal Characteristics
Electrical Characteristics
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation @T
Thermal Resistance, Junction to Ambient @T
Operating and Storage Temperature Range
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure
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•
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•
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Notes:
DS31225 Rev. 2 – 2
Epitaxial Planar Die Construction
Complementary PNP Type Available (DXT5401)
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Case: SOT89-3L
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish - Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.072 grams (approximate)
1.
2.
3.
4.
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Device mounted on FR-4 PCB, pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf.
Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%.
Characteristic
A
= 25°C (Note 3)
Characteristic
Characteristic
@T
A
= 25°C unless otherwise specified
@T
A
A
= 25°C unless otherwise specified
= 25°C (Note 3)
V
V
V
V
Symbol
V
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
BE(SAT)
C
I
I
h
CBO
EBO
NF
h
f
obo
FE
T
fe
www.diodes.com
Min
180
160
100
6.0
80
80
30
50
⎯
⎯
⎯
⎯
⎯
⎯
1 of 4
Symbol
Symbol
T
V
V
V
j
R
, T
P
CBO
CEO
EBO
I
θ JA
C
D
Max
0.15
0.20
STG
250
200
300
1.0
6.0
8.0
50
50
⎯
⎯
⎯
⎯
⎯
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TOP VIEW
MHz
Unit
nA
μA
nA
dB
pF
⎯
⎯
V
V
V
V
V
Schematic and Pin Configuration
NPN SURFACE MOUNT TRANSISTOR
I
I
I
V
V
V
V
V
V
I
I
I
I
V
V
V
V
C
C
E
C
C
C
C
CB
CB
EB
CE
CE
CE
CB
CE
CE
CE
= 10μA, I
= 10mA, I
= 10mA, I
= 100μA, I
= 1.0mA, I
= 50mA, I
= 50mA, I
-55 to +150
= 4.0V, I
= 5.0V, I
= 10V, I
= 5.0V, I
= 120V, I
= 120V, I
= 5.0V, I
= 5.0V, I
= 10V, f = 1.0MHz, I
= 10V, I
Value
Value
180
160
600
125
6.0
SOT89-3L
1
C
B
B
B
B
C
C
C
E
B
C
C
C
C
= 0
E
E
= 1.0mA
= 1.0mA
= 5.0mA
= 5.0mA
= 1.0mA, f = 1.0kHz
= 10mA, f = 100MHz
= 0
= 0
= 0
= 50mA
= 200μA, R
= 1.0mA
= 10mA
= 0
= 0, T
Test Condition
BASE
1
A
COLLECTOR
= 100°C
EMITTER
DXT5551
E
S
2,4
= 0
3
= 1.0kΩ, f = 1.0kHz
© Diodes Incorporated
°C/W
Unit
Unit
mA
°C
W
V
V
V
DXT5551
