DPLS160 Diodes, Inc., DPLS160 Datasheet - Page 2

• Manufacturer Part Number: DPLS160
• Description: Low Vce Sat Pnp Surface Mount Transistor
• Manufacturer: Diodes, Inc.

Electrical Characteristics
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Notes:
DS31389 Rev. 4 - 2
400
250
150
350
300
200
100
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
50
0
0
25
Characteristic
Fig. 1 Maximum Power Dissipation vs.
T , AMBIENT TEMPERATURE (°C)
A
50
Ambient Temperature
75
100 125
@T
A
= 25°C unless otherwise specified
150
175
V
V
V
V
R
Symbol
V
V
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
CE(SAT)
BE(SAT)
BE(ON)
C
I
I
I
h
CBO
CES
EBO
f
FE
obo
200
T
www.diodes.com
2 of 4
Min
200
150
100
150
-80
-60
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-5
-0.95
-0.82
-160
Typ
325
250
180
160
220
-90
-90
⎯
⎯
⎯
⎯
⎯
⎯
10
1.5
1.2
0.9
0.6
0.3
0
0
Max
-100
-100
-100
-160
-175
-330
-1.1
-0.9
330
-50
15
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-V , COLLECTOR-EMITTER VOLTAGE (V)
CE
1
Fig. 2 Typical Collector Current
MHz
Unit
mΩ
mV
nA
μA
nA
nA
pF
vs. Collector-Emitter Voltage
V
V
V
V
V
V
I
I
I
V
V
V
V
V
V
V
I
I
I
I
I
V
V
V
C
C
E
C
C
C
C
C
2
CB
CB
CE
EB
CE
CE
CE
CE
CB
CE
= -100μA, I
= -1A, I
= -1A, I
= -1A, I
= -100μA, I
= -10mA, I
= -100mA, I
= -500mA, I
= -5V, I
= -5V, I
= -5V, I
= -5V, I
= -5V, I
= -60V, I
= -60V, I
= -60V, V
= -10V, f = 1.0MHz
= -10V, I
B
B
B
= -100mA
= -100mA
= -50mA
3
C
C
C
C
C
Test Condition
B
E
E
C
= 0
E
C
= -1mA
= -500mA
= -1A
= -1A
BE
B
B
= 0
= 0
= 0, T
= -50mA, f = 100MHz
= 0
= 0
= -1mA
= -50mA
= 0
I = -10mA
I = -8mA
I = -6mA
I = -4mA
I = -2mA
B
B
B
B
B
A
4
= 150°C
© Diodes Incorporated
DPLS160
5