DPLS350E Diodes, Inc., DPLS350E Datasheet - Page 2

• Manufacturer Part Number: DPLS350E
• Description: Low Vce Sat Pnp Surface Mount Transistor
• Manufacturer: Diodes, Inc.

Electrical Characteristics
OFF CHARACTERISTICS (Note 4)
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Equivalent On-Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Output Capacitance
Notes:
DS31230 Rev. 3 - 2
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3)
1.2
1.0
0.8
0.6
0.4
0.2
4.
0
0
Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
25
T , AMBIENT TEMPERATURE (°C)
A
Characteristic
50
75
100
@T
A
= 25°C unless otherwise specified
125
150
175
V
V
V
Symbol
V
R
V
V
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
CE(SAT)
BE(SAT)
I
BE(ON)
C
I
h
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CBO
EBO
f
obo
FE
T
2 of 4
Min
200
200
100
100
-50
-50
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-5
Fig. 2 Typical Collector Current vs.Collector-Emitter Voltage
Typ
67
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
0
-V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Max
-100
-100
-100
-180
-300
1
-1.2
-1.1
150
-50
40
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
MHz
mV
mΩ
nA
μA
nA
2
pF
⎯
V
V
V
V
V
V
V
V
I
I
I
V
V
V
I
I
I
I
I
V
V
f = 100MHz
V
C
C
E
C
C
C
E
C
CB
CB
EB
CE
CE
CE
CE
CE
CB
= -100μA
= -10mA
= -100μA
= -0.5A, I
= -1A, I
= -2A, I
= -2A, I
= -2A, I
= -5V, I
= -50V, I
= -50V, I
= -2V, I
= -2V, I
= -2V, I
= -2V, I
= -5V, I
= -10V, f = 1MHz
3
Test Conditions
B
B
B
B
= -50mA
= -200mA
= -200mA
= -200mA
C
B
C
C
C
C
C
E
E
I = -10mA
= -50mA
I = -8mA
I = -6mA
I = -4mA
I = -2mA
= 0
= -0.5A
= -1A
= -2A
= -1A
= -100mA,
B
B
B
B
B
4
= 0
= 0, T
© Diodes Incorporated
A
= 150°C
DPLS350E
5