DRDNB21D Diodes, Inc., DRDNB21D Datasheet - Page 2

• Manufacturer Part Number: DRDNB21D
• Description: Complex Array For Dual Relay Driver
• Manufacturer: Diodes, Inc.

Electrical Characteristics, Pre-Biased NPN Transistor
Electrical Characteristics, Switching Diode
Device Characteristics
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistor Tolerance
Resistance Ratio Tolerance
Gain-Bandwidth Product*
Reverse Breakdown Voltage
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
*
Notes:
DS30756 Rev. 5 - 2
Transistor - For Reference Only
200
150
100
250
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
4. Short duration pulse test used to minimize self-heating effect.
50
0
0
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Fig. 1 Power Derating Curve (Total Device)
Characteristic
T , AMBIENT TEMPERATURE (°C)
Characteristic
A
40
80
120
(Note 4)
(Note 4)
Note 3
160
Symbol
ΔR2/R1
Symbol
V
V
V
I
V
ΔR1
O(off)
200
O(on)
G
l(off)
l(on)
f
(BR)R
C
I
V
T
I
t
l
R
rr
www.diodes.com
l
F
T
@T
2 of 5
0.62
Min
A
75
⎯
⎯
⎯
⎯
⎯
⎯
Min
-30
-20
0.5
80
⎯
⎯
⎯
⎯
⎯
= 25°C unless otherwise specified
0.855
Typ
Max
0.72
1.25
250
1.0
2.5
4.0
4.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
50
30
25
⎯
@T
A
Max
+30
+20
1.1
0.3
3.6
0.5
⎯
⎯
⎯
= 25°C unless otherwise specified
Unit
μA
μA
μA
nA
pF
ns
V
V
Unit
MHz V
mA V
uA
⎯
%
%
V
V
V
I
I
I
I
I
V
V
V
V
V
I
R
F
F
F
F
F
V
V
I
V
V
R
R
R
R
R
O
= 5.0mA
= 10mA
= 100mA
= 150mA
= I
= 10μA
CC
O
I
CC
O
CE
/I
= 75V
= 75V, T
= 25V, T
= 20V
= 0, f = 1.0MHz
= 5V
l
= 0.3V, I
= 5V, I
R
= 50mA/0.25mA
= 10V, I
= 5V, I
= 50V, V
= 10mA, I
O
j
j
O
= 150°C
= 150°C
O
= 10mA
Test Condition
E
Test Condition
= 100μA
I
= 5mA
= 5mA, f = 100MHz
= 0V
rr
= 0.1 x I
© Diodes Incorporated
R
, R
DRDNB21D
L
= 100Ω