DZT955 Diodes, Inc., DZT955 Datasheet - Page 2

• Manufacturer Part Number: DZT955
• Description: Low Vce Sat Pnp Surface Mount Transistor
• Manufacturer: Diodes, Inc.

Electrical Characteristics
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Output Capacitance
SWITCHING CHARACTERISTICS
Switching Times
Notes:
DS31280 Rev. 2 - 2
4.
1.0
0.8
0.6
0.2
0.4
0
Fig. 1 Max Power Dissipation vs. Ambient Temperature
0
Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
25
T , AMBIENT TEMPERATURE (°C)
A
Characteristic
50
75
@T
A
100
= 25°C unless otherwise specified
125
150
Symbol
V
V
V
V
V
V
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
BE(SAT)
C
I
I
BE(ON)
www.diodes.com
h
CBO
EBO
t
t
f
off
obo
on
FE
T
2 of 4
-180
-140
Min
100
100
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
75
⎯
⎯
⎯
⎯
⎯
-6
Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage
0.8
0.6
0.4
0.2
0
Typ
150
430
0
10
40
85
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-V , COLLECTOR-EMITTER VOLTAGE (V)
CE
1
-1110
Max
-120
-150
-370
-950
300
-50
-10
-60
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-1
2
Unit
MHz
mV
mV
mV
nA
μA
nA
pF
ns
⎯
V
V
V
3
Test Condition
I
I
I
V
V
T
V
I
I
I
I
I
I
I
I
I
I
I
f = 100MHz
V
I
I
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
B2
A
CB
CB
EB
CB
= -100mA, I
= -3A, I
= -10mA, V
= -100μA, I
= -10mA, I
= -100μA, I
= -500mA, I
= -1A, I
= -3A, I
= -3A, V
= -1A, V
= -3A, V
= -10A, V
= -100mA, V
= -1A, I
= 100°C
= 100mA, V
= -150V, I
= -150V, I
= - 6V, I
= -20V, f = 1MHz
I = -5mA
I = -4mA
I = -3mA
B
B
B
B
B1
B
I = -2mA
B
B
I = -1mA
4
B
B
B
CE
CE
CE
B
= -300mA
= -100mA
= -300mA
CE
C
= -100mA
B
= -5V
= -5V
= -5V
© Diodes Incorporated
C
E
CE
B
= 0
B
E
E
B
= 0
= -5V
B
B
CE
CC
= 0
= 0
= -5mA
= 0
= 0,
= -50mA
= -5V
= -10V,
= -50V
5
DZT955