DZT751 Diodes, Inc., DZT751 Datasheet - Page 2

• Manufacturer Part Number: DZT751
• Description: Low Vce Sat Pnp Surface Mount Transistor
• Manufacturer: Diodes, Inc.

Electrical Characteristics
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 5)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
DC Current Gain
AC CHARACTERISTICS
Transition Frequency
Output Capacitance
Switching Times
Notes:
DS31115 Rev. 3 - 2
5. Pulse Test: Pulse width ≤300μs. Duty cycle ≤2.0%.
1.0
0.8
0.6
0.4
0.2
0
0
25
vs. Ambient Temperature (Note 3)
T , AMBIENT TEMPERATURE ( C)
Characteristic
A
Fig. 1 Power Dissipation
50
75
@T
100
A
= 25°C unless otherwise specified
125
°
V
V
V
V
V
Symbol
V
150
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
BE(SAT)
I
BE(ON)
C
I
h
www.diodes.com
CBO
EBO
t
t
f
obo
on
off
FE
T
2 of 4
Min
100
100
-80
-60
70
80
40
-5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-0.08
Typ
-0.2
-0.9
-0.8
200
180
160
140
145
200
⎯
⎯
⎯
⎯
⎯
⎯
45
0
-V , COLLECTOR-EMITTER VOLTAGE (V)
-1.25
Max
CE
-0.1
-0.1
-0.3
-0.6
300
-10
30
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-1
1
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
Unit
MHz
μA
μA
μA
pF
⎯
ns
ns
V
V
V
V
V
V
V
2
I
I
I
V
V
V
I
I
I
V
V
V
V
V
V
f = 100MHz
V
V
I
C
C
E
C
C
C
B1
CB
CB
EB
CE
CE
CE
CE
CE
CE
CB
CC
= -100μA, I
= -1A, I
= -1A, I
= -100μA, I
= -10mA, I
= -3A, I
= I
= -5V, I
= -60V, I
= -60V, I
= -4V, I
= -2V, I
= -2V, I
= -2V, I
= -2V, I
= -2V, I
= -10V, f = 1MHz
= -10V, I
B2
3
= -50mA
B
B
B
Test Condition
= -100mA
= -100mA
= -300mA
C
C
C
C
C
C
C
B
E
E
C
C
= 0
= -50mA
= -500mA
= -100mA,
E
= -1A
= -1A
= -2A
= 0
= 0
= 0, T
= -500mA,
= 0
= 0
4
© Diodes Incorporated
A
= 100°C
5
DZT751