DNLS320A Diodes, Inc., DNLS320A Datasheet - Page 2

• Manufacturer Part Number: DNLS320A
• Description: Low V Npn Surface Mount Transistor
• Manufacturer: Diodes, Inc.

Electrical Characteristics
OFF CHARACTERISTICS (Note 5)
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Equivalent On-Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Output Capacitance
Notes:
DS31335 Rev. 4 - 2
800
700
600
500
400
300
200
100
5.
0
Fig. 1 Max Power Dissipation vs. Ambient Temperature
Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
0
25
T , AMBIENT TEMPERATURE (°C)
Characteristic
A
50
75
100 125
@T
A
= 25°C unless otherwise specified
Note 3
150
175
V
V
V
200
V
R
V
Symbol
V
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
CE(SAT)
BE(SAT)
I
BE(ON)
I
h
C
www.diodes.com
CBO
EBO
f
FE
T
ob
2 of 4
Min
220
220
220
200
150
100
⎯
⎯
⎯
20
20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
5
Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage
3.0
2.5
2.0
1.5
1.0
0.5
0
Typ
220
0
85
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
1
Max
100
100
120
230
210
310
105
1.1
1.2
1.2
50
70
35
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
MHz
2
mV
mΩ
nA
μA
nA
pF
⎯
V
V
V
V
V
V
V
V
V
I
I
I
V
V
V
V
V
I
I
I
I
I
I
I
I
V
V
f = 100MHz
V
C
C
E
C
C
C
C
C
E
C
C
CB
CB
EB
CE
CE
CE
CE
CE
CE
CE
CB
= 100μA
= 10mA
= 100μA
= 0.5A, I
= 1A, I
= 2A, I
= 2A, I
= 3A, I
= 2A, I
= 2A, I
= 3A, I
3
= 5V, I
= 20V, I
= 20V, I
= 2V, I
= 2V, I
= 2V, I
= 2V, I
= 2V, I
= 2V, I
= 5V, I
= 10V, f = 1MHz
Test Conditions
B
B
B
B
B
B
B
I = 6mA
I = 4mA
I = 2mA
= 50mA
= 40mA
= 200mA
= 300mA
= 200mA
= 40mA
= 300mA
C
B
B
C
C
C
C
C
C
C
I = 10mA
I = 8mA
B
B
B
B
E
E
= 50mA
= 0
= 0.1A
= 0.5A
= 1A
= 2A
= 3A
= 1A
= 100mA,
= 0
= 0, T
4
© Diodes Incorporated
A
= 150°C
DNLS320A
5