DNLS350Y Diodes, Inc., DNLS350Y Datasheet - Page 2

• Manufacturer Part Number: DNLS350Y
• Description: Low Vce Sat Npn Surface Mount Transistor
• Manufacturer: Diodes, Inc.

Electrical Characteristics
OFF CHARACTERISTICS (Note 4)
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector-Emitter Cutoff Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Equivalent On-Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Output Capacitance
Notes:
DS31208 Rev. 4 - 2
4.
1.0
0.8
0.6
0.2
0.4
0
Fig. 1 Max Power Dissipation vs. Ambient Temperature
0
Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
25
T , AMBIENT TEMPERATURE (°C)
A
Characteristic
50
75
@T
A
100
= 25°C unless otherwise specified
125
150
V
V
V
V
R
V
Symbol
V
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
CE(SAT)
BE(SAT)
I
BE(ON)
C
I
I
h
www.diodes.com
CBO
EBO
CES
f
obo
FE
T
2 of 4
Min
300
300
300
200
100
100
⎯
⎯
⎯
⎯
50
50
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
5
Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage
3.0
2.5
2.0
1.5
1.0
0.5
0
Typ
130
124
180
38
70
62
0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
1
Max
100
100
100
700
160
280
260
370
130
1.1
1.2
1.1
50
80
25
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
MHz
mV
mΩ
nA
2
μA
nA
nA
pF
⎯
V
V
V
V
V
V
V
V
V
V
I
I
I
V
V
V
V
V
I
I
I
I
I
I
I
I
V
V
f = 100MHz
V
C
C
E
C
C
C
C
C
E
C
C
CB
CB
EB
CE
CE
CE
CE
CE
CE
CE
CE
CB
= 100μA
= 10mA
= 100μA
= 0.5A, I
= 1A, I
= 2A, I
= 2A, I
= 3A, I
= 2A, I
= 2A, I
= 3A, I
3
= 5V, I
= 50V, I
= 50V, I
= 50V, V
= 2V, I
= 2V, I
= 2V, I
= 2V, I
= 2V, I
= 2V, I
= 5V, I
= 10V, f = 1MHz
Test Conditions
B
B
B
B
B
B
B
= 50mA
= 100mA
= 200mA
= 300mA
= 200mA
= 100mA
= 300mA
C
B
C
C
C
C
C
C
C
I = 10mA
E
E
I = 8mA
I = 6mA
= 50mA
B
= 0
= 0.1A
= 0.5A
= 1A
= 2A
= 3A
= 1A
= 100mA,
B
I = 4mA
B
BE
B
I = 2mA
B
= 0
= 0, T
4
= 0
© Diodes Incorporated
A
= 150°C
DNLS350Y
5