Mechanical Data
Features
Maximum Ratings
Thermal Characteristics
Electrical Characteristics
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation (Note 3) @ T
Thermal Resistance, Junction to Ambient Air (Note 3) @ T
Operating and Storage Temperature Range
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Output Capacitance
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•
•
•
•
•
•
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•
•
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Notes:
DS31144 Rev. 4 - 2
Epitaxial Planar Die Construction
Complementary NPN Type Available (2DD1766)
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Case: SOT89-3L
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking & Type Code Information: See Page 3
Ordering Information: See Page 3
Weight: 0.072 grams (approximate)
1.
2.
3.
4.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
No purposefully added lead.
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Characteristic
Characteristic
Characteristic
@T
A
= 25°C
A
= 25°C unless otherwise specified
@T
A
= 25°C unless otherwise specified
2DB1188Q
2DB1188R
2DB1188P
A
= 25°C
V
V
V
Symbol
V
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
I
I
h
C
www.diodes.com
CBO
EBO
f
FE
T
ob
1 of 4
Min
120
180
-40
-32
⎯
⎯
⎯
82
⎯
⎯
-5
Symbol
V
V
V
I
Symbol
CBO
CEO
EBO
CM
T
I
C
j
R
, T
P
θ JA
D
STG
-0.35
Typ
120
20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Schematic and Pin Configuration
PNP SURFACE MOUNT TRANSISTOR
Max
-0.8
180
270
390
⎯
⎯
⎯
⎯
⎯
-1
-1
-55 to +150
2DB1188P/Q/R
SOT89-3L
Value
Value
125
-40
-32
-5
-3
-2
1
MHz
Unit
μA
μA
pF
⎯
⎯
⎯
V
V
V
V
1
I
I
I
V
V
I
V
I
f = 30MHz
V
f = 1MHz
C
C
E
C
E
CB
EB
CE
CB
= -50μA, I
= -1mA, I
= -50μA, I
= -2A, I
= 0.1A, V
= -4V, I
= -20V, I
= -3V, I
= -10V, I
2,4
3
Conditions
B
B
C
= -0.2A
CE
C
© Diodes Incorporated
E
C
°C/W
E
E
Unit
Unit
= 0
2DB1188P/Q/R
= 0
= -0.5A
= 0
= 0
°C
W
V
V
V
A
A
= 0
= -5V,
= 0,
