Mechanical Data
Features
Maximum Ratings
Thermal Characteristics
Electrical Characteristics
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation (Note 3) @ T
Thermal Resistance, Junction to Ambient Air (Note 3) @T
Operating and Storage Temperature Range
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Output Capacitance
SWITCHING CHARACTERISTICS
Turn On Time
Storage Time
Fall Time
•
•
•
•
•
•
•
•
•
•
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Notes:
DS31240 Rev. 2 - 2
Epitaxial Planar Die Construction
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Case: SOT89-3L
Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.072 grams (approximate)
1.
2.
3.
4.
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Characteristic
Characteristic
Characteristic
@T
A
= 25°C
A
= 25°C unless otherwise specified
@T
A
= 25°C unless otherwise specified
A
= 25°C
V
V
V
V
V
Symbol
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
BE(SAT)
I
C
I
h
www.diodes.com
CBO
EBO
t
t
f
stg
obo
on
FE
t
T
f
1 of 4
Min
200
6.0
30
25
⎯
⎯
65
⎯
⎯
⎯
⎯
⎯
⎯
⎯
T
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Symbol
Symbol
J
V
V
V
R
, T
P
CBO
CEO
EBO
I
θ JA
C
D
STG
0.12
Typ
300
170
0.9
16
70
25
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Schematic and Pin Configuration
NPN SURFACE MOUNT TRANSISTOR
Max
100
100
400
0.4
1.2
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
SOT89-3L
-55 to +150
Unit
MHz
Value
Value
nA
nA
pF
ns
ns
ns
⎯
V
V
V
V
V
125
6.0
2.0
30
25
1
I
I
I
V
V
V
V
I
I
V
f = 100MHz
V
V
I
C
C
C
C
C
B1
CB
EB
CE
CE
CE
CB
CE
= 10μA, I
= 1mA, I
= 10μA, I
= 1.5A, I
= 1.5A, I
= I
2DD1621T
= 4.0V, I
= 20V, I
= 2.0V, I
= 2.0V, I
= 10V, I
= 10V, I
= 12V, V
1
B2
Test Conditions
= 25mA, I
B
B
B
2,4
E
C
E
C
E
3
= 0
= 75mA
= 75mA
C
C
C
BE
= 0
= 0
= 0
= 50mA,
= 0, f = 1MHz
= 0
= 0.1A
= 1.5A
= 5V,
© Diodes Incorporated
C
°C/W
Unit
Unit
°C
= 500mA
W
V
V
V
A
2DD1621T