NUS2501W6 ON Semiconductor, NUS2501W6 Datasheet - Page 2
NUS2501W6
Manufacturer Part Number
NUS2501W6
Description
Integrated Npn Digital Transistor With Switching Transistor With Switching
Manufacturer
ON Semiconductor
Datasheet
1.NUS2501W6.pdf
(5 pages)
1. Pulse Test: Pulse Width < 300 μs, Duty Cycle < 2%.
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 1)
ELECTRICAL CHARACTERISTICS
Collector−Base Cutoff Current
Collector−Emitter Cutoff Current
Emitter−Base Cutoff Current
Collector−Base Breakdown Voltage
Collector−Emitter Breakdown Voltage (Note 1)
Diode Reverse Breakdown Voltage
Diode Reverse Voltage Leakage Current
Diode Forward Voltage
Diode Capacitance
DC Current Gain
Collector−Emitter Saturation Voltage
Output Voltage(on)
Output Voltage(off)
Input Resistor
Resistor Ratio
Characteristic
(T
A
= 25°C unless otherwise noted.)
V
V
Symbol
V
(BR)CBO
(BR)CEO
R
http://onsemi.com
V
I
I
I
CE(sat)
V
V
h
CBO
CEO
EBO
C
V
R
1
(BR)
I
FE
OH
OL
R
/R
F
D
1
2
2
V
I
V
V
V
C
CE
CC
CC
R
V
I
= 10 mA, I
V
V
I
C
Test Conditions
= 6.0 V, f = 1.0 MHz
C
EB
CB
CE
= 10 V, I
= 5.0 V, V
= 5.0 V, V
= 2.0 mA, I
= 10 mA, I
I
I
R
R
F
R
V
= 6.0 V, I
= 50 V, I
= 50 V, I
L
L
= 100 mA
R
= 100 mA
= 1.0 kW
= 1.0 kW
= 70 V
−
−
C
B
B
B
= 5.0 mA
= 0.3 mA
E
E
B
C
B
= 3.5 V,
= 0.5 V,
= 0
= 0
= 0
= 0
= 0
32.9
Min
4.9
0.8
50
50
80
80
−
−
−
−
−
−
−
−
Typ
140
1.0
−
−
−
−
−
−
−
−
−
−
−
−
−
Max
0.25
61.1
100
500
0.1
0.1
1.2
3.5
0.2
1.2
−
−
−
−
−
mAdc
nAdc
nAdc
mAdc
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
kW
pF
−
−