DIM100PHM33-F000 Dynex Semiconductor, DIM100PHM33-F000 Datasheet - Page 2

• Manufacturer Part Number: DIM100PHM33-F000
• Description: Igbt Modules - 3300v Half Bridge Igbt Module
• Manufacturer: Dynex Semiconductor

DIM100PHM33-F000
ABSOLUTE MAXIMUM RATINGS - PER ARM
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T
case
2/9
Symbol
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
= 25˚C unless stated otherwise
V
V
I
P
V
Q
C(PK)
I
I
CES
GES
max
2
isol
C
PD
t
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Diode I
Isolation voltage - per module
Partial discharge - per module
2
t value (Diode arm)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
Parameter
V
T
1ms, T
T
V
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
IEC1287. V
case
case
GE
R
= 0, t
= 0V, T
= 90˚C
= 25˚C, T
case
p
= 10ms, T
= 115˚C
j
1
= –25˚C
= 3500V, V
j
= 150˚C
vj
= 125˚C
Test Conditions
2
= 2600V, 50Hz RMS
-
www.dynexsemi.com
Max.
3300
6000
100
200
1.3
10
20
5
Units
kA
kW
pC
V
V
A
A
V
2
s