DIM400GCM33-F000 Dynex Semiconductor, DIM400GCM33-F000 Datasheet - Page 4

• Manufacturer Part Number: DIM400GCM33-F000
• Description: Igbt Chopper Module
• Manufacturer: Dynex Semiconductor

Symbol
ELECTRICAL CHARACTERISTICS
T
Note:
€ Measured at the power busbars and not the auxiliary terminals
*
V
V
SC
L is the circuit inductance + L
case
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
www.dynexsemi.com
CE(sat)
R
GE(TH)
C
I
I
I
V
L
ces
ces
I
FM
INT
F
ies
F
M
Data
€
= 25° C unless stated otherwise.
SEMICONDUCTOR
€
Collector cut-off current
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
Diode forward current
Diode maximum forward current
Diode forward voltage (IGBT arm)
Diode forward voltage (Diode arm)
Diode forward voltage (IGBT arm)
Diode forward voltage (Diode arm)
Input capacitance
Module inductance – per arm
Internal resistance – per arm
Short circuit. I
Parameter
sc
M
V
V
V
I
V
V
DC
t
I
I
V
T
t
V
IEC 60747-9
C
p
F
F
p
j
GE
GE
GE
GE
GE
CE
CE(max)
= 1ms
= 400A
= 400A, T
= 125° C, V
= 40mA, V
10µs,
= 25V, V
= 0V, V
= 0V, V
= ±20V, V
= 15V, I
= 15V, I
= V
Test Conditions
CES
CE
CE
case
C
C
GE
GE
= 400A
= 400A, T
cc
CE
= V
= V
- L*×di/dt
= V
= 0V, f = 1MHz
= 125° C
= 2500V,
= 0V
CES
CES
-
-
CE
, T
case
case
= 125° C
= 125° C
I
I
1
2
Min.
5.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2000
1850
Typ.
0.26
3.6
6.5
2.8
2.9
2.9
3.0
3.0
72
25
-
DIM400GCM33-F000
-
-
-
-
Max.
400
800
30
7.0
-
2
1
-
-
-
-
-
-
-
-
-
-
4
/
9
Units
mA
mA
m
nH
µA
nF
V
V
V
A
A
V
V
A
A