DIM200PLM33-F000 Dynex Semiconductor, DIM200PLM33-F000 Datasheet - Page 3

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DIM200PLM33-F000

Manufacturer Part Number
DIM200PLM33-F000
Description
Igbt Modules - 3300v
Manufacturer
Dynex Semiconductor
Datasheet
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
www.dynexsemi.com
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
Baseplate material:
Creepage distance:
Clearance:
CTI (Critical Tracking Index):
Symbol
SEMICONDUCTOR
R
R
R
T
th(c-h)
th(j-c)
th(j-c)
T
stg
-
j
Thermal resistance - transistor
Thermal resistance – diode (IGBT
arm)
Thermal resistance- diode ( Diode
arm)
Thermal resistance – case to heatsink
(per module)
Junction temperature
Storage temperature range
Screw torque
Parameter
AIN
AlSiC
33mm
20mm
350
Continuous dissipation –
junction to case
Continuous dissipation –
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
Mounting – M6
Electrical connections – M5
Test Conditions
-
Min.
-40
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
DIM200PLM33-F000
Max.
150
125
125
48
96
96
16
5
4
° C/kW
° C/kW
° C/kW
° C/kW
3
Units
Nm
Nm
/
° C
° C
° C
9

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