DIM800DDM17-A000 Dynex Semiconductor, DIM800DDM17-A000 Datasheet - Page 7

• Manufacturer Part Number: DIM800DDM17-A000
• Description: Dual Switch Igbt Module
• Manufacturer: Dynex Semiconductor

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1600
1400
1200
1000
800
600
400
200
800
600
500
400
300
200
100
700
0
0
0
0
Fig. 9 Diode reverse bias safe operating area
V
and not the auxiliary terminals
Fig. 7 Diode typical forward characteristics
T
F
j
is measured at power busbars
= 125˚C
0.5
T
T
j
j
= 25˚C
= 125˚C
400
1.0
Foward voltage, V
Reverse voltage, V
800
1.5
2.0
1200
F
R
- (V)
- (V)
2.5
1600
3.0
3.5
2000
1800
1600
1200
1000
2000
1400
100
800
600
400
200
0.1
10
0.001
1
0
0
T
V
R
case
ge
g(min)
Fig. 8 Reverse bias safe operating area
= ±15V
Fig. 10 Transient thermal impedance
IGBT
Diode
= 125˚C
= 2.2Ω
400
0.01
Collector-emitter voltage, V
R
R
i
i
i
i
(ms)
(ms)
(˚C/KW)
(˚C/KW)
Pulse width, t
800
DIM800DDM17-A000
0.1
0.56
0.12
1.23
0.11
1
Module
1200
p
- (s)
Chip
4.00
3.89
9.26
4.24
2
ce
- (V)
47.15
12.96
48.75
1
5.64
1600
3
Transistor
Diode
257.21
256.75
16.53
7.81
4
2000
10
7/10