HN1K06FU TOSHIBA Semiconductor CORPORATION, HN1K06FU Datasheet - Page 4

• Manufacturer Part Number: HN1K06FU
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

(Q1, Q2 common)
*: TOTAL rating
0.001
0.01
350
300
250
200
150
100
0.1
50
3
1
0.5
0
0
Common source
V GS = 2.5 V
Ta = 25°C
1
20
Ambient temperature Ta (°C)
Drain current I
40
V
60
DS (ON)
P
D
10
* – Ta
80
– I
D
100
D
(mA)
120
100
140
300
160
4
1000
500
300
100
50
30
10
1
2.5 V
0
10 μs
V IN
3
Drain current I
IN
5
I D
t – I
t off
10
t r
OUT
V DD
D
D
V DD = 5 V
D.U. < = 1%
V IN : t r , t f < 5 ns
(Z out = 50 Ω)
Common source
Ta = 25°C
(mA)
30
t f
HN1K06FU
t on
50
2007-11-01
100