HN1B04F TOSHIBA Semiconductor CORPORATION, HN1B04F Datasheet - Page 2

• Manufacturer Part Number: HN1B04F
• Description: Silicon Npn Epitaxial Type Pct Process Audio Frequency General Purpose Amplifier Applications
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Q1
Q2
Marking
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-Emitter Voltage
Transition frequency
Collector output capacitance
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-Emitter Voltage
Transition frequency
Collector output capacitance
Electrical Characteristics
Electrical Characteristics
Characteristic
Characteristic
50
Equivalent Circuit (Top View)
(Ta = 25°C)
(Ta = 25°C)
V
V
Symbol
Symbol
h
h
h
h
CE (sat)
CE (sat)
I
I
I
I
V
C
V
C
CBO
EBO
FE(1)
FE(2)
CBO
EBO
FE(1)
FE(2)
f
f
BE
BE
T
ob
T
ob
Circuit
Circuit
Test
Test
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
2
V
V
V
V
I
V
V
V
V
V
V
V
I
V
V
V
Q1
C
C
CB
EB
CE
CE
CE
CE
CB
CB
EB
CE
CE
CE
CE
CB
6
= −100mA, I
= 100mA, I
1
= −5V, I
= 5V, I
= −35V, I
= −1V, I
= −6V, I
= −1V, I
= −6V, I
= −6V, I
= 35V, I
= 1V, I
= 6V, I
= 1V, I
= 6V, I
= 6V, I
Test Condition
Test Condition
5
2
C
C
C
C
C
E
C
C
C
C
C
E
E
= 0
= 0, f = 1MHz
= 100mA
= 400mA
= 100mA
= 20mA
B
E
= 0
= −100mA
= −400mA
= −100mA
= −20mA
= 0, f = 1MHz
= 0
B
= 10mA
= 0
= −10mA
4
3
Q2
Min
Min
70
25
70
25
―
―
―
―
―
―
―
―
―
―
―
―
Typ.
−0.1
−0.8
Typ.
200
300
0.1
0.8
―
―
―
―
―
―
―
―
7
7
HN1B04F
2004-03-11
−0.25
−100
−100
Max
−1.0
Max
0.25
400
100
100
400
1.0
―
―
―
―
―
―
MHz
MHz
Unit
Unit
nA
nA
nA
nA
pF
pF
V
V
V
V