MAT02 Analog Devices, Inc., MAT02 Datasheet - Page 3

• Manufacturer Part Number: MAT02
• Description: Low Noise, Matched Dual Monolithic Transistor
• Manufacturer: Analog Devices, Inc.

CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the MAT02 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
REV. E
ABSOLUTE MAXIMUM RATINGS
Collector-Base Voltage (BV
Collector-Emitter Voltage (BV
Collector-Collector Voltage (BV
Emitter-Emitter Voltage (BV
Collector Current (I
Emitter Current (I
Total Power Dissipation
Operating Temperature Range
ELECTRICAL CHARACTERISTICS
Parameter
Offset Voltage
Average Offset
Input Offset Current
Input Offset
Input Bias Current
Current Gain
Collector-Base
Collector-Emitter
Collector-Collector
NOTES
1
2
3
Measurements are taken at the temperature extremes and 25°C.
4
5
Specifications subject to change without notice.
Measured at I
Guaranteed by V
The initial zero offset voltage is established by adjusting the ratio of I
Guaranteed by design.
Current gain is guaranteed with Collector-Base Voltage (V
Voltage Drift
Current Drift
Leakage Current
Leakage Current
Leakage Current
Case Temperature ≤ 40°C
Ambient Temperature ≤ 70°C
MAT02E, F . . . . . . . . . . . . . . . . . . . . . . . . . –25°C to +85°C
C
= 10 µA and guaranteed by design over the specified range of I
OS
test (TCV
E
) . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA
C
) . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA
OS
Symbol
V
TCV
I
TCI
I
h
I
I
I
OS
B
CBO
CES
CC
FE
OS
≅
CBO
2
V
EE
OS
OS
T
OS
CEO
) . . . . . . . . . . . . . . . . . . . . 40 V
) . . . . . . . . . . . . . . . . . . . . 40 V
. . . . . . . . . . . . . . . . . . . . . 1.8 W
CC
3
for V
) . . . . . . . . . . . . . . . . . . 40 V
Model
MAT02EH
MAT02FH
) . . . . . . . . . . . . . . . . . . 40 V
. . . . . . . . . . . . . . . . 500 mW
Conditions
V
1 µA ≤ I
10 µA ≤ I
V
I
I
I
I
I
I
I
V
V
V
OS
1
C
C
C
C
C
C
C
CB
OS
CB
CE
CC
= 10 µA
= 10 µA
= 10 µA
= 1 mA
= 100 µA
= 10 µA
= 1 µA
= 0
Trimmed to Zero
= V
= V
= V
V
BE
) T = 298K for T
C
MAX
MAX
MAX
C
≤ 1 mA
5
CB
4
≤ 1 mA, 0 ≤ V
(V
, V
) swept from 0 V to V
V
(T
50 µV
150 µV
CB
BE
OS
= 15 V, –25 C ≤ T
A
1
= 0
= 25 C)
max
C
ORDERING GUIDE
1 to I
A
3
= 25°C.
C
2 at T
CB
C
.
–3–
≤ V
MAX
Temperature
Range
–25°C to +85°C
–25°C to +85°C
A
= 25°C. This ratio must be held to 0.003% over the entire temperature range.
MAX
Operating Junction Temperature . . . . . . . . . . –55°C to +150°C
Storage Temperature . . . . . . . . . . . . . . . . . . . –65°C to +150°C
Lead Temperature (Soldering, 60 sec) . . . . . . . . . . . . . 300°C
Junction Temperature . . . . . . . . . . . . . . . . . . –65°C to +150°C
NOTES
1
2
3
A
Absolute maximum ratings apply to both DICE and packaged devices.
Rating applies to applications using heat sinking to control case temperature.
Rating applies to applications not using a heat sinking; devices in free air only.
Derate linearly at 16.4 mW/°C for case temperature above 40°C.
Derate linearly at 6.3 mW/°C for ambient temperature above 70°C.
at the indicated collector current.
≤ +85 C, unless otherwise noted.)
2
Min Typ
325
275
225
200
Package
Option
TO-78
TO-78
MAT02E
0.08 0.3
0.03 0.1
40
2
3
3
Max
70
8
90
45
WARNING!
Min Typ
300
250
200
150
MAT02F
0.08 1
0.03 0.3
40
3
4
4
ESD SENSITIVE DEVICE
Max
220
13
150
50
MAT02
Unit
µV
µV/°C
nA
pA/°C
nA
nA
nA
nA