QST9 ROHM Co. Ltd., QST9 Datasheet - Page 2
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QST9
Manufacturer Part Number
QST9
Description
Complex Transistor Bip+bip
Manufacturer
ROHM Co. Ltd.
Datasheet
1.QST9.pdf
(3 pages)
Transistors
1000
Type
QST9
0.001
Fig.4 Grounded emitter propagation
Packaging specifications
Electrical characteristic curves
100
0.01
10
0.1
0.001
1
100
0
10
BASE TO EMITTER CURRENT : V
0.1
V
Pulsed
1
CE
characteristics
EMITTER TO BASE VOLTAGE : V
COLLECTOR TO BASE VOLTAGE : V
Fig.7 Collector output capacitance
=−2V
COLLECTOR CURRENT : I
Ta=25°C
Ta=100°C
Fig.1 DC current gain
Cob
0.01
Ta=−40°C
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
Package
Code
Basic ordering unit (pieces)
0.5
vs. collector current
Ta=100°C
1
0.1
Cib
Ta=−40°C
Ta=25°C
1
10
1
C
V
Pulsed
(A)
CE
Ta = 25°C
I
f = 1MHz
BE
=−2V
C
= 0A
(V)
EB
10
( V)
1.5
CB
( V)
100
1000
Fig.2 Collector-emitter saturation voltage
Taping
100
3000
0.01
10
0.1
0.01
TR
10
0.001
1
I
Pulsed
base-emitter saturation voltage
vs. collector current
C
V
Fig.5 Gain bandwidth product
/I
V
B
CE(sat)
BE(sat)
=20/1
COLLECTOR CURRENT : I
EMITTER CURRENT : I
Ta=−40°C
Ta=100°C
0.01
Ta=25°C
vs. emitter current
0.1
0.1
Ta=−40°C
Ta=100°C
Ta=25°C
E
Ta=25°C
V
f=100MHz
(A)
CE
C
(A)
=−2V
1
1
Fig.3 Collector-emitter saturation voltage
1000
0.001
100
0.01
10
0.1
0.001
10
0.01
1
1
Ta=25°C
Pulsed
vs. collector current
COLLECTOR CURRENT : I
COLLECTOR CURRENT : I
0.01
Fig.6 Switching time
Rev.A
I
C
/I
B
=50/1
0.1
0.1
I
C
/I
tr
B
=20/1
tstg
tf
QST9
I
C
Ta=25°C
V
I
/I
C
C
C
B
CE
(A)
/I
(A)
=10/1
B
=−5V
=20/1
tdon
2/2
1
1