QST6 ROHM Co. Ltd., QST6 Datasheet - Page 2
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QST6
Manufacturer Part Number
QST6
Description
Low Vce Sat Transistor
Manufacturer
ROHM Co. Ltd.
Datasheet
1.QST6.pdf
(3 pages)
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Transistors
Fig7. Collector output capacitance vs.collector-base voltage
Type
QST6
1000
Fig.4 Grounded emitter propagation characteristics
Packaging specifications
Electrical characteristic curves
100
−0.001
−0.001
10
−0.01
−0.1
−10
Emitter input capacitance vs.emitter-base voltage
1000
−1
100
10
−0.1
1
0
V
PULSED
BASE TO EMITTER CURRENT : V
CE
Ta=100°C
COLLECTOR TO BASE VOLTAGE : V
EMITTER TO BASE VOLTAGE : V
COLLECTOR CURRENT : I
V
Ta=25°C
=−2V
PULSED
Fig1. DC current gain
CE
−0.01
−40°C
25°C
=−2V
vs.collector current
Package
Code
Basic ordering unit (pieces)
−1
−0.1
−0.5
Cib
−10
−1
C
Ta=100°C
Cob
(
A)
−40°C
Ta = 25°C
I
f = 1MHz
25°C
E
= 0A
BE
EB
( V)
(V
−10
CB
)
−100
( V)
−1
0.001
0.01
Taping
0.1
10
3000
0.001
1
TR
1000
Fig.2 Collector-emitter saturation voltage
100
10
0.001
base-emitter saturation voltage
COLLECTOR CURRENT : I
0.01
Fig.5 Gain bandwidth product
Ta=100°C
Ta=−40°C
Ta=25°C
vs.collector current
EMITTER CURRENT : I
0.01
vs.emitter current
0.1
Ta=100°C
0.1
Ta=−40°C
Ta=25°C
1
I
PULSED
C
C
/I
(
E
A)
B
1
V
V
(
=20
Ta=25°C
V
PULSED
A)
BE(sat)
CE(sat)
CE
=−2V
10
10
−0.001
−0.01
1000
−0.1
100
−0.001
−0.001
−1
10
1
Fig.3 Collector-emitter saturation voltage
Ta=25°C
PULSED
I
C
=20 I
I
C
COLLECTOR CURRENT : I
/I
B
COLLECTOR CURRENT : I
=50
−0.01
B
20
10
1=−20
vs.collector current
Fig.6 Switching time
−0.01
I
Rev.A
B
=2
−0.1
−0.1
−1
Ta=25°C
PULSED
C
QST6
C
(
A)
(A)
tr
tstg
tf
tdon
2/2
−10
−1