DMB54D0UDW Diodes, Inc., DMB54D0UDW Datasheet - Page 2

• Manufacturer Part Number: DMB54D0UDW
• Description: N-channel Enhancement Mode Mosfet Plus Pnp Transistor
• Manufacturer: Diodes, Inc.

Electrical Characteristics - MOSFET
Electrical Characteristics - PNP Transistor
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Collector-Base Breakdown Voltage (Note 4)
Collector-Emitter Breakdown Voltage (Note 4)
Emitter-Base Breakdown Voltage (Note 4)
DC Current Gain (Note 4)
Collector-Emitter Saturation Voltage (Note 4)
Base-Emitter Saturation Voltage (Note 4)
Base-Emitter Voltage (Note 4)
Collector-Cutoff Current (Note 4)
Gain Bandwidth Product
Output Capacitance
Noise Figure
Notes:
DMB54D0UDW
Document number: DS31677 Rev. 3 - 2
4. Short duration pulse test used to minimize self-heating effect.
Characteristic
Characteristic
V
V
V
Symbol
Symbol
V
V
R
V
@T
BV
V
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
BE(SAT)
DS (ON)
C
BE(ON)
I
I
I
C
C
C
GS(th)
g
h
DSS
GSS
CBO
NF
f
FS
oss
FE
OB
DSS
iss
rss
T
A
= 25°C unless otherwise specified
www.diodes.com
@T
-600
Min
220
100
-50
-45
2 of 6
—
—
—
—
—
—
—
—
-5
Min
180
A
0.7
50
⎯
⎯
⎯
⎯
⎯
⎯
⎯
= 25°C unless otherwise specified
-700
-900
Typ
290
—
—
—
—
—
—
—
—
—
—
—
—
Typ
0.8
3.1
2.1
⎯
⎯
⎯
⎯
25
4
5
-100
-400
-750
-820
Max
-4.0
475
-15
4.5
10
—
—
—
—
—
—
Max
1.0
1.0
5.0
⎯
10
⎯
⎯
⎯
⎯
4
5
Unit
MHz
mV
mV
mV
nA
µA
pF
dB
—
V
V
V
Unit
mS
μA
μA
pF
pF
pF
Ω
V
V
I
I
I
V
I
I
I
I
V
V
V
V
V
V
I
R
C
C
E
C
C
C
C
C
CE
CE
CE
CB
CB
CE
CB
S
= 10μA, I
= 10mA, I
= 1μA, I
= -10mA, I
= -100mA, I
= -10mA, I
= -100mA, I
= -0.2mA, V
= 2.0KΩ, f = 1.0KHz, BW = 200Hz
= -5.0V, I
= -5.0V, I
= -5.0V, I
= -30V
= -30V, T
= -5.0V, I
= -10V, f = 1.0MHz
V
V
V
V
V
V
V
V
f = 1.0KHz
V
f = 1.0MHz
GS
DS
GS
GS
DS
GS
GS
DS
DS
C
= 50V, V
= V
= 10V, I
= 10V, V
= 0V, I
= ±8V, V
= ±12V, V
= 4V, I
= 2.5V, I
Test Condition
B
B
= 0
DMB54D0UDW
B
B
= 0
C
C
C
C
A
= 0
B
B
GS
Test Condition
CE
= -0.5mA
= -0.5mA
= -2.0mA
= -2.0mA
= -10mA
= 150°C
= -10mA, f = 100MHz
= -5.0mA
= -5.0mA
, I
D
D
= -5.0Vdc,
D
D
= 250μA
= 100mA
GS
D
GS
DS
= 100mA,
= 250μA
DS
= 80mA
© Diodes Incorporated
= 0V
= 0V
= 0V,
= 0V
March 2009