DME150 Microsemi Corporation, DME150 Datasheet

DME150

Manufacturer Part Number

DME150

Description

150 Watts, 50 Volts, Pulsed Avionics 1025 - 1150 Mhz

Manufacturer

Microsemi Corporation

Datasheet

1.DME150.pdf (2 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

DME150

Manufacturer:

Triquint

Quantity:

1 400

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ELECTRICAL CHARACTERISTICS @ 25

GENERAL DESCRIPTION

The DME 150 is a high power COMMON BASE bipolar transistor. It is

designed for pulsed systems in the frequency band 1025-1150 MHz. The

device has gold thin-film metallization and diffused ballasting for proven

highest MTTF. The transistor includes input and ouput prematch for

broadband capabilit. Low thermal resistance package reduces junction

temperature, extends life.

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25

Maximum Voltage and Current

BVces

BVebo

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

SYMBOL

Pout

VSWR

BVebo

BVces

θjc

Microsemi reserves the right to change, without notice, the specifications and information contained herein.

Note 1: At rated output power and pulse conditions

Collector Current

Emitter to Base Voltage

Collector to Base Voltage

2: At rated pulse conditions

Emitter to Base Breakdown

Collector to Emitter Breakdown

Thermal Resistance

DC - Current Gain

CHARACTERISTICS

Power Out

Power Input

Power Gain

Collector Efficiency

Load Mismatch Tolerance

Visit our web site at

www.microsemi.com

- 65 to + 150

Ie = 15 mA

Ic = 25 mA

Ic = 250 mA, Vce = 5 V

F = 1025-1150 MHz

Vcc = 50 Volts

PW = 10 µsec

DF = 1%

F = 1025 MHz

TEST CONDITIONS

290 Watts

4.0 Volts

15 Amps

55 Volts

+ 150

Avionics 1025 - 1150 MHz

150 Watts, 50 Volts, Pulsed

or contact our factory direct.

DME 150

MIN

150

7.8

4.0

Rev A January 2009

CASE OUTLINE

55AY, STYLE 1

TYP

8.3

MAX

20:1

100

0.6

UNITS

Watts

Volts

C/W

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DME150 Summary of contents

Page 1

GENERAL DESCRIPTION The DME 150 is a high power COMMON BASE bipolar transistor designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor ...

Page 2

... Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at or contact our factory direct. www.microsemi.com DME150 ...

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