EMT1DXV6T1 ON Semiconductor, EMT1DXV6T1 Datasheet - Page 2

• Manufacturer Part Number: EMT1DXV6T1
• Description: Dual General Purpose Transistor
• Manufacturer: ON Semiconductor

2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
*This package is inherently Pb−Free.
ELECTRICAL CHARACTERISTICS
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
Collector−Base Breakdown Voltage
Collector−Emitter Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector−Base Cutoff Current
Emitter−Base Cutoff Current
Collector−Emitter Saturation Voltage (Note 2)
DC Current Gain (Note 2)
Transition Frequency
Output Capacitance
EMT1DXV6T1
EMT1DXV6T1G
EMT1DXV6T5
EMT1DXV6T5G
(I
(I
(I
(V
(V
(I
(V
(V
(V
C
C
E
C
CB
EB
CE
CE
CB
= −50 mAdc, I
= −50 mAdc, I
= −1.0 mAdc, I
= −50 mAdc, I
= −5.0 Vdc, I
= −30 Vdc, I
= −6.0 Vdc, I
= −12 Vdc, I
= −12 Vdc, I
E
E
B
E
C
E
B
B
C
= 0)
= 0)
= −5.0 mAdc)
= 0)
= 0 Adc, f = 1 MHz)
= −2.0 mAdc, f = 30 MHz)
= 0)
= 0)
= −1.0 mAdc)
Device
Characteristic
(T
A
= 25°C)
EMT1DXV6T1, EMT1DXV6T5
http://onsemi.com
2
SOT−563*
SOT−563*
SOT−563*
SOT−563*
Package
V
V
V
Symbol
V
(BR)CBO
(BR)CEO
(BR)EBO
I
I
CE(sat)
C
h
CBO
EBO
f
FE
OB
T
−6.0
Min
−60
−50
120
−
−
−
−
−
4000 Units / Tape & Reel
4000 Units / Tape & Reel
8000 Units / Tape & Reel
8000 Units / Tape & Reel
Typ
140
3.5
−
−
−
−
−
−
−
Shipping
Max
−0.5
−0.5
−0.5
560
−
−
−
−
−
†
MHz
Unit
Vdc
Vdc
Vdc
Vdc
nA
mA
pF
−