EMX4 ROHM Co. Ltd., EMX4 Datasheet - Page 2

• Manufacturer Part Number: EMX4
• Description: High Transition Frequency Dual Transistors
• Manufacturer: ROHM Co. Ltd.

Transistors
Fig.4 Gain bandwidth product vs. emitter current
Electrical characteristic curves
Fig.1 DC current gain vs. collector current
Fig.7 Insertion gain vs. collector current
500
200
100
25
20
15
10
50
20
10
5000
2000
1000
5
0
500
200
100
0.5
0.1 0.2
−0.1 −0.2
COLLECTOR CURRENT : Ic (mA)
1
COLLECTOR CURRENT : I
EMITTER CURRENT : I
0.5
−0.5 −1 −2
2
1
2
5
10
5
−5 −10 −20
Ta=25°C
V
f=200MHz
10 20
CE
E
20
Ta=25°C
V
C
(mA)
=12V
(mA)
Ta=25°C
V
CE
CE
=10V
=10V
50
50
−50
Fig.2 Collector-emitter saturation voltage
Fig.8 Insertion gain vs. collector voltage
500
200
100
50
20
10
30
25
20
15
10
5
0
0.1 0.2
COLLECTOR TO EMITTER VOLTAGE : V
0
Fig.5 Collector to base time constance
50
20
10
vs. collector current
5
2
1
0.1 0.2
COLLECTOR CURRENT : I
2
vs. collector current
COLLECTOR CURRENT : I
0.5
0.5
4
1
1
2
6
2
5
8
5
Ta=25°C
I
f=200MHz
10 20
C
C
=2mA
Ta=25°C
I
C
(mA)
/I
Ta=25°C
V
f=31.8MHz
10 20
10
B
CE
C
=5
(mA)
=10V
CE
50
12
(V)
50
EMX4 / UMX4N / IMX4
Fig.3 Capacitance vs. reverse bias voltage
5.0
2.0
1.0
0.5
0.2
0.1
Fig.9 Noise factor vs. collector current
0.1 0.2
25
20
15
10
20
10
5
0
0
0.1
0.1 0.2
Fig.6 Insertion gain vs. frequency
COLLECTOR TO BASE VOLTAGE : V
0.2
COLLECTOR CURRENT : I
0.5
0.5
FREQUENCY : f (GHz)
0.5
1
1
Rev.B
2
2
1
5
2
5
Cre
Cob
10 20
Ta=25°C
V
I
Ta=25°C
V
f=200MHz
10 20
Ta=25°C
f=1MHz
I
C
E
CE
CE
=10mA
C
=0A
(mA)
=10V
=12V
5
CB
(V)
2/3
50
50
10